- 您现在的位置：买卖IC网 > PDF目录93259 > DS1220AB-150 (DALLAS SEMICONDUCTOR) 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 PDF资料下载
参数资料
| 型号： | DS1220AB-150 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 |
| 封装： | 0.720 INCH, EXTENDED, DIP-24 |
| 文件页数： | 8/9页 |
| 文件大小： | 136K |
| 代理商： | DS1220AB-150 |
DS1220AB/AD
8 of 9
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high-impedance state during this period.
9. Each DS1220AB and each DS1220AD has a built-in switch that disconnects the lithium source until
VCC is first applied by the user. The expected tDR is defined as accumulative time in the absence of
VCC starting from the time power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power down condition the voltage on any pin may not exceed the voltage on VCC .
12. tWR1 , tDH1 are measured from WE going high.
13. tWR2 , tDH2 are measured from CE going high.
14. DS1220AB and DS1220AD modules are recognized by Underwriters Laboratory (U.L.
) under file
E99151.
DC TEST CONDITIONS
Outputs Open
All Voltages Are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL Gate
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220AB-100 | 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDIP24 |
| DS1220AB-120 | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, PDIP24 |
| DS1220AD-100 | 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, PDIP24 |
| DS1220AD-120 | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24 |
| DS1220AD-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AB150+ | 制造商:Maxim Integrated Products 功能描述:Nonvolatile RAM,DS1220AB150 2kx8bit 16kb |
| DS1220AB-150+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AB-150IND | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AB-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AB-150IND+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。