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参数资料
| 型号： | DS1220AD-120 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24 |
| 封装： | 0.720 INCH, PLASTIC, DIP-24 |
| 文件页数： | 1/10页 |
| 文件大小： | 158K |
| 代理商： | DS1220AD-120 |
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121907
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 2k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 24-pin DIP package
Read and write access times as fast as 100 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% VCC operating range (DS1220AD)
Optional ±5% VCC operating range
(DS1220AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
24-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A10
- Address Inputs
DQ0-DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+5V)
GND
- Ground
DESCRIPTION
The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs
organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and
control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition
occurs, the lithium energy source is automatically switched on and write protection is unconditionally
enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs
directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of
the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance.
There is no limit on the number of write cycles that can be executed and no additional support circuitry is
required for microprocessor interfacing.
DS1220AB/AD
16k Nonvolatile SRAM
www.maxim-ic.com
14
VCC
WE
1
2
3
4
5
6
7
8
9
10
11
12
13
24
15
23
22
21
20
19
18
17
16
A7
A5
A3
A2
A1
A0
DQ0
DQ1
GND
DQ2
A6
A4
A8
A9
OE
A10
CE
DQ7
DQ6
DQ5
DQ3
DQ4
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220AD-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA24 |
| DS1220AB-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220AB | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AD-120+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-120-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD150 | 制造商:DALLAS 功能描述:* |
| DS1220AD-150 | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-150+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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