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参数资料
| 型号： | DS1220AD-120 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 120 ns, DMA24 |
| 封装： | 0.720 INCH, PLASTIC, DIP-24 |
| 文件页数： | 8/10页 |
| 文件大小： | 158K |
| 代理商： | DS1220AD-120 |
DS1220AB/AD
7 of 10
POWER-DOWN/POWER-UP CONDITION
SEE NOTE 11
POWER-DOWN/POWER-UP TIMING
(TA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
VCC Fail Detect to CE and WE Inactive
tPD
1.5
μs
11
VCC slew from VTP to 0V
tF
300
μs
VCC slew from 0V to VTP
tR
300
μs
VCC Valid to CE and WE Inactive
tPU
2
ms
VCC Valid to End of Write Protection
tREC
125
ms
(TA =25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Expected Data Retention Time
tDR
10
years
9
WARNING:
Under no circumstances are negative undershoots, of any amplitude, allowed when device is in the
battery backup mode.
NOTES:
1.
WE
is high for a read cycle.
2. OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.
3. tWP is specified as the logical AND of CE and WE . tWP is measured from the latter of CE or CE
going low to the earlier of CE or WE going high.
4. tDS is measured from the earlier of CE or WE going high.
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high-impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220AD-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA24 |
| DS1220AB-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA24 |
| DS1220AD | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220AB | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220AD-120+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-120-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220AD150 | 制造商:DALLAS 功能描述:* |
| DS1220AD-150 | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220AD-150+ | 功能描述:NVRAM 16k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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