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参数资料
| 型号： | DS1220Y-100 |
| 厂商： | MAXIM INTEGRATED PRODUCTS INC |
| 元件分类： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA24 |
| 封装： | 0.720 INCH,DIP-24 |
| 文件页数： | 7/9页 |
| 文件大小： | 390K |
| 代理商： | DS1220Y-100 |
NOT RECOMMENDED FOR NEW DESIGNS
DS1220Y
7 of 9
6. If the CE low transition occurs simultaneously with or later than the WE low transition in write
cycle 1, the output buffers remain in a high impedance state during this period.
7. If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state during this period.
8. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9. Each DS1220Y is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The expected tDR is defined as starting at the date of
manufacture.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to
+85°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage of VCC .
12. tWR1 , tDH1 are measured from WE going high.
13. tWR2 , tDH2 are measured from CE going high.
14. DS1220Y modules are recognized by Underwriters Laboratories (UL
) under file E99151 (R).
DC TEST CONDITIONS
Outputs open.
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0-3.0V
Timing Measurement Reference Levels
Input:1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION/SELECTOR GUIDE
PART
TEMP RANGE
SUPPLY
TOLERANCE
PIN-PACKAGE
SPEED GRADE
(ns)
DS1220Y-100
0°C to +70°C
5V
± 10%
24 / 720 EMOD
100
DS1220Y-100+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
100
DS1220Y-100IND
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
100
DS1220Y-100IND+
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
100
DS1220Y-120
0°C to +70°C
5V
± 10%
24 / 720 EMOD
120
DS1220Y-120+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
120
DS1220Y-150
0°C to +70°C
5V
± 10%
24 / 720 EMOD
150
DS1220Y-150+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
150
DS1220Y-200
0°C to +70°C
5V
± 10%
24 / 720 EMOD
200
DS1220Y-200+
0°C to +70°C
5V
± 10%
24 / 720 EMOD
200
DS1220Y-200IND
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
200
DS1220Y-200IND+
-40°C to +85°C
5V
± 10%
24 / 720 EMOD
200
+ Denotes a lead-free/RoHS-compliant package.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220Y-200 | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1220Y-150 | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 |
| DS1220Y | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1222S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 |
| DS1222 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP14 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220Y-100+ | 制造商:Maxim Integrated Products 功能描述:NVRAM NVSRAM PARALLEL 16KBIT 5V - Rail/Tube |
| DS1220Y-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1220Y-100IND+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220Y-120 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:16k Nonvolatile SRAM |
| DS1220Y-120+ | 制造商:Maxim Integrated Products 功能描述:RAM NV 16K-120NS LEAD FREE - Rail/Tube |
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