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参数资料
| 型号： | DS1220Y-150 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Static RAM |
| 英文描述： | 2K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP24 |
| 封装： | 0.720 INCH, EXTENDED, DIP-24 |
| 文件页数： | 2/8页 |
| 文件大小： | 144K |
| 代理商： | DS1220Y-150 |
DS1220Y
2 of 8
READ MODE
The DS1220Y executes a read cycle whenever WE (Write Enable) is inactive (high) and CE (Chip
Enable) and OE (Output Enable) are active (low). The unique address specified by the 11 address inputs
(A0-A10) defines which of the 2048 bytes of data is to be accessed. Valid data will be available to the
eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing
that CE and OE access times are also satisfied. If CE and OE access times are not satisfied, then data
access must be measured from the later-occurring signal and the limiting parameter is either tCO for CE or
tOE for OE rather than address access.
WRITE MODE
The DS1220Y executes a write cycle whenever the WE and CE signals are active (low) after address
inputs are stable. The later-occurring falling edge of CE or WE will determine the start of the write
cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address inputs must be
kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time
(tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during
write cycles to avoid bus contention. However, if the output drivers are enabled ( CE and OE active)
then WE will disable the outputs in tODW from its falling edge.
DATA RETENTION MODE
The DS1220Y provides full-functional capability for VCC greater than 4.5 volts and write protects at 4.25
nominal. Data is maintained in the absence of VCC without any additional support circuitry. The
DS1220Y constantly monitors VCC. Should the supply voltage decay, the NV SRAM automatically write
protects itself, all inputs become “don’t care,” and all outputs become high-impedance. As VCC falls
below approximately 3.0 volts, a power switching circuit connects the lithium energy source to RAM to
retain data. During power-up, when VCC rises above approximately 3.0 volts, the power switching circuit
connects external VCC to RAM and disconnects the lithium energy source. Normal RAM operation can
resume after VCC exceeds 4.5 volts.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1220Y | 2K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP24 |
| DS1222S | SPECIALTY MICROPROCESSOR CIRCUIT, PDSO16 |
| DS1222 | SPECIALTY MICROPROCESSOR CIRCUIT, PDIP14 |
| DS1225AB-170 | 8K X 8 NON-VOLATILE SRAM MODULE, 170 ns, DMA28 |
| DS1225AB | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1220Y-150+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220Y-150-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1220Y-200 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220Y-200+ | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1220Y-200-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
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