参数资料
型号: DS1222S+
厂商: Maxim Integrated
文件页数: 3/4页
文件大小: 0K
描述: IC BANKSWITCH CMOS 16-SOIC
标准包装: 45
控制器类型: 静态 RAM(SRAM)
电源电压: 4.5 V ~ 5.5 V
工作温度: 0°C ~ 70°C
封装/外壳: 16-SOIC(0.295",7.50mm 宽)
供应商设备封装: 16-SOIC W
包装: 管件
DS1222
3 of 4
ABSOLUTE MAXIMUM RATINGS*
Voltage on any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0
°C to 70°C
Storage Temperature
-55
°C to +125°C
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(0
°C to 70°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Power Supply Voltage
VCC
4.5
5.0
5.5
V
1
Logic 1
VIH
2.2
V CC +0.3
V
1
Logic 0
VIL
-0.3
+0.8
V
1
DC ELECTRICAL CHARACTERISTICS
(0
°C to 70°C; V
CC = 5V
±10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
A
I/O Leakage Current
ILO
-1.0
+1.0
A
Output Current @ 2.4V
IOH
-1.0
mA
2
Output Current @ 0.4V
IOL
+4.0
mA
2
Operating Current
ICC
15
mA
CAPACITANCE
(TA = 25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
510
pF
Input/Output Capacitance
CI/O
510
pF
AC ELECTRICAL CHARACTERISTICS
(0
°C to 70°C; V
CC = 5V
±10%)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Address Setup
tAS
5ns
Address Hold
tAH
50
ns
Read Recovery
tRR
40
ns
Propagation Delay
tPD
15
ns
2
Power Fail Input to First CEI
tPF
50
ns
Chip Enable Low
tCW
110
ns
NOTES:
1. All voltages are referenced to ground.
2. Measured with a load as shown in Figure 1.
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