参数资料
| 型号： | DS1314S/T&R |
| 厂商： | Maxim Integrated |
| 文件页数： | 1/12页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR NV W/BATT MON 3V 16SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 1,000 |
| 控制器类型： | 非易失性 RAM |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC W |
| 包装： | 带卷 (TR) |
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FEATURES
Converts CMOS SRAM into nonvolatile
memory
Unconditionally write-protects SRAM when
VCC is out of tolerance
Automatically switches to battery backup
supply when VCC power failure occurs
Monitors voltage of a lithium cell and
provides advanced warning of impending
battery failure
Signals low-battery condition on active low
Battery Warning output signal
Automatic VCC power-fail detection for 3.0V
or 3.3V power supplies
Space-saving 8-pin DIP and SOIC packages
Optional 16-pin SOIC and 20-pin TSSOP
versions reset processor when power failure
occurs and hold processor in reset during
system power-up
Industrial temperature range of -40°C to
+85°C
PIN ASSIGNMENT
PIN DESCRIPTION
VCCI
- Power Supply Input
VCCO
- SRAM Power Supply Output
VBAT
- Backup Battery Input
CEI
- Chip Enable Input
CEO
- Chip Enable Output
TOL
- VCC Tolerance Select
BW
- Battery Warning Output
(Open Drain)
RST
- Reset Output (Open Drain)
GND
- Ground
NC
- No Connection
DESCRIPTION
The DS1314 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application
problem of converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-
of-tolerance condition. When such a condition is detected, chip enable is inhibited to accomplish write
protection and the battery is switched on to supply the RAM with uninterrupted power. Special circuitry
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery
consumption.
DS1314
3V Nonvolatile Controller with Lithium Battery Monitor
1
2
3
4
20
19
18
17
5
6
7
8
9
10
11
12
13
14
15
16
NC
VCCI
RST
NC
BW
NC
CEO
NC
CEI
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
DS1314E 20-Pin TSSOP
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1314S-2 8-Pin SOIC
(150 mils)
1
2
3
4
8
7
6
5
GND
TOL
VBAT
VCCO
VCCI
BW
CEO
CEI
DS1314 8-Pin DIP
(300 mils)
1
2
3
4
16
15
14
13
5
6
7
8
9
10
11
12
NC
VCCO
NC
VBAT
NC
TOL
NC
GND
NC
VCCI
RST
NC
BW
CEO
NC
CEI
DS1314S 16-Pin SOIC
(300 mils)
19-6307; Rev 6/12
相关PDF资料 |
PDF描述 |
|---|---|
| DS1321E/T&R | IC CTRL NV W/BATT MON 5V 20TSSOP |
| DS1402-BP3+ | CABLE 3' IBUTTON TO PROBE |
| DS1404+ | CABLE CRADLE BLACK |
| DS1481S/T&R | IC BUS MASTER 1 WIRE 14-SOIC |
| DS1482S+ | IC LEVEL SHIFT 1-WIRE 16-SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1315 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Phantom Time Chip |
| DS1315_07 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Phantom Time Chip |
| DS1315-33 | 功能描述:实时时钟 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1315-33+ | 功能描述:实时时钟 Phantom Time Chip RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1315-3V | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Real-Time Clock |
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