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| 型号： | DS1225AB-170+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 64KBIT 170NS 28DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 12 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 64K (8K x 8) |
| 速度： | 170ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 28-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 28-EDIP |
| 包装： | 管件 |
19-5625; Rev 11/10
DS1225AB/AD
64k Nonvolatile SRAM
www.maxim-ic.com
FEATURES
PIN ASSIGNMENT
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10 years minimum data retention in the
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absence of external power
Data is automatically protected during power
loss
Directly replaces 8k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
1
2
3
4
5
6
7
8
9
10
28
27
26
25
24
23
22
21
20
19
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
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Read and write access times of 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% V CC operating range (DS1225AD)
Optional ±5% V CC operating range
(DS1225AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
DQ0 11 18 DQ6
DQ1 12 17 DQ5
DQ2 13 16 DQ4
GND 14 15 DQ3
28-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A12 - Address Inputs
DQ0-DQ7 - Data In/Data Out
- Chip Enable
CE
- Write Enable
W E
- Output Enable
OE
V CC
- Power (+5V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V CC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1225AB-170+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AB-170-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
| DS1225AB-200 | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AB-200+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AB-200IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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