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| 型号： | DS1225AD-170+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 64KBIT 170NS 28DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 12 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 64K (8K x 8) |
| 速度： | 170ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 28-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 28-EDIP |
| 包装： | 管件 |
DS1225AB/AD
READ MODE
The DS1225AB and DS1225AD execute a read cycle whenever WE (Write Enable) is inactive (high) and
CE (Chip Enable) and OE (Output Enable) are active (low). The unique address specified by the 13
address inputs (A 0 -A 12 ) defines which of the 8192 bytes of data is to be accessed. Valid data will be
available to the eight d at a output drivers within t ACC (Access Time) after the last address input signal is
stable, providing that CE and OE access times are also satisfied. If CE and OE access times are not
satisfied, then data access must be measured from the later-occurring signal and the limiting parameter is
either t CO for CE or t OE for OE rather than address access.
WRITE MODE
The DS1225AB and DS1225AD execute a write cycle whenever the WE and CE signals are active
(low) after address inputs are stable. The later-occurring falling edge of CE or WE will determine the
start of the write cycle. The write cycle is terminated by the earlier rising edge of CE or WE . All address
inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum
recovery time (t WR ) before another cycle can be initiated. The OE control signal should be kept inactive
(high) during write cycles to avoid bus contention. However, if the output drivers are enabled ( CE and
OE active) then WE will disable the outputs in t ODW from its falling edge.
DATA RETENTION MODE
The DS1225AB provides full functional capability for V CC greater than 4.75 volts and write protects by
4.5 volts. The DS1225AD provides full-functional capability for V CC greater than 4.5 volts and write
protects by 4.25 volts. Data is maintained in the absence of V CC without any additional support circuitry.
The nonvolatile static RAMs constantly monitor V CC . Should the supply voltage decay, the NV SRAMs
automatically write protect themselves, all inputs become “don’t care,” and all outputs become high-
impedance. As V CC falls below approximately 3.0 volts, the power switching circuit connects the lithium
energy source to RAM to retain data. During power-up, when V CC rises above approximately 3.0 volts,
the power switching circuit connects external V CC to RAM and disconnects the lithium energy source.
Normal RAM operation can resume after V CC exceeds 4.75 volts for the DS1225AB and 4.5 volts for the
DS1225AD.
FRESHNESS SEAL
Each DS1225 is shipped from Maxim with the lithium energy source disconnected, guaranteeing full
energy capacity. When V CC is first applied at a level of greater than V TP , the lithium energy source is
enabled for battery backup operation.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1225AD-170+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AD-170-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
| DS1225AD-200 | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AD-200+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AD-200IND | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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