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参数资料
| 型号： | DS1225AD-70 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Static RAM |
| 英文描述： | 8K X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP28 |
| 封装： | 0.720 INCH, EXTENDED, DIP-28 |
| 文件页数： | 4/10页 |
| 文件大小： | 147K |
| 代理商： | DS1225AD-70 |
DS1225AB/AD
3 of 10
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +7.0V
Operating Temperature
0°C to 70°C; -40°C to +85°C for IND parts
Storage Temperature
-40°C to +70°C; -40°C to +85°C for IND parts
Soldering Temperature
260°C for 10 seconds
This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA: See Note 10)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
DS1225AB Power Supply Voltage
VCC
4.75
5.0
5.25
V
DS1225AD Power Supply Voltage
VCC
4.50
5.0
5.5
V
Logic 1
VIH
2.2
VCC
V
Logic 0
VIL
0.0
+0.8
V
(VCC =5V ± 5% for DS1225AB)
(TA: See Note 10)
DC ELECTRICAL CHARACTERISTICS
(VCC =5V ± 10% for DS1225AD)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Leakage Current
IIL
-1.0
+1.0
A
I/O Leakage Current
CE > VIH< VCC
IIO
-1.0
+1.0
A
Output Current @ 2.4V
IOH
-1.0
mA
Output Current @ 0.4V
IOL
2.0
mA
Standby Current CE =2.2V
ICCS1
5.0
10.0
mA
Standby Current CE =VCC -0.5V
ICCS2
3.0
5.0
mA
Operating Current tCYC=200 ns
(Commercial)
ICC01
75
mA
Operating Current tCYC=200 ns
(Industrial)
ICC01
85
mA
Write Protection Voltage
(DS1225AB)
VTP
4.50
4.62
4.75
V
Write Protection Voltage
(DS1225AD)
VTP
4.25
4.37
4.5
V
CAPACITANCE
(TA =25°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
510
pF
Input/Output Capacitance
CI/O
510
pF
相关PDF资料 |
PDF描述 |
|---|---|
| DS1225AB-200 | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| DS1225Y-170 | 8K X 8 NON-VOLATILE SRAM MODULE, 170 ns, PDIP28 |
| DS1225Y-150 | 8K X 8 NON-VOLATILE SRAM MODULE, 150 ns, PDIP28 |
| DS1225Y | 8K X 8 NON-VOLATILE SRAM MODULE, 200 ns, PDIP28 |
| DS1230AB | 32K X 8 NON-VOLATILE SRAM MODULE, 200 ns, DMA28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1225AD-70+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AD70IND | 制造商:UNBRANDED 功能描述:ELECTRONIC PARTS DM54LS283W THROUGH*NIC* |
| DS1225AD-70IND | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1225AD-70-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:64k Nonvolatile SRAM |
| DS1225AD-70IND+ | 功能描述:NVRAM 64k Nonvolatile SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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