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参数资料
| 型号： | DS1230ABL-100-IND |
| 英文描述： | NVRAM (Battery Based) |
| 中文描述： | NVRAM中（基于电池） |
| 文件页数： | 7/12页 |
| 文件大小： | 469K |
| 代理商： | DS1230ABL-100-IND |
DS1230Y/AB
4 of 12
CAPACITANCE
(tA=25
°C)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
NOTES
Input Capacitance
CIN
5
10
pF
Input/Output Capacitance
CI/O
5
10
pF
AC ELECTRICAL
(VCC=5V
± 5% for DS1230AB)
CHARACTERISTICS
(tA: See Note 10) (VCC=5V
± 10% for DS1230Y)
DS1230AB-70
DS1230Y-70
DS1230AB-85
DS1230Y-85
DS1230AB-100
DS1230Y-100
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
UNITS
NOTES
Read Cycle
Time
tRC
70
85
100
ns
Access Time
tACC
70
85
100
ns
OE
to Output
Valid
tOE
35
45
50
ns
CE
to Output
Valid
tCO
70
85
100
ns
OE
or CE to
Output Active
tCOE
5
ns
5
Output High Z
from
Deselection
tOD
25
30
35
ns
5
Output Hold
from Address
Change
tOH
5
ns
Write Cycle
Time
tWC
70
85
100
ns
Write Pulse
Width
tWP
55
65
75
ns
3
Address Setup
Time
tAW
0
ns
Write Recovery
Time
tWR1
tWR2
5
15
5
15
5
15
ns
12
13
Output High Z
from WE
tODW
25
30
35
ns
5
Output Active
from WE
tOEW
5
ns
5
Data Setup
Time
tDS
30
35
40
ns
4
Data Hold
Time
tDH1
tDH2
0
10
0
10
0
10
ns
12
13
相关PDF资料 |
PDF描述 |
|---|---|
| DS1230ABL-120 | NVRAM (Battery Based) |
| DS1230ABL-120-IND | NVRAM (Battery Based) |
| DS1230ABL-150 | NVRAM (Battery Based) |
| DS1230ABL-150-IND | NVRAM (Battery Based) |
| DS1230ABL-200 | NVRAM (Battery Based) |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1230ABL-120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-120-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-150 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-150-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1230ABL-200 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
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