参数资料
型号: DS1249W-150
厂商: Maxim Integrated
文件页数: 3/8页
文件大小: 0K
描述: IC NVSRAM 2MBIT 150NS 32DIP
标准包装: 11
格式 - 存储器: RAM
存储器类型: NVSRAM(非易失 SRAM)
存储容量: 2M (256K x 8)
速度: 150ns
接口: 并联
电源电压: 3 V ~ 3.6 V
工作温度: 0°C ~ 70°C
封装/外壳: 32-DIP 模块(0.600",15.24mm)
供应商设备封装: 32-EDIP
包装: 管件
DS1249W
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground
Operating Temperature Range
Commercial:
Industrial:
Storage Temperature Range
Lead Temperature (soldering, 10s)
-0.3V to +4.6V
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
+260°C
Note: EDIP is wave or hand soldered only.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T A : See Note 10)
PARAMETER
Power-Supply Voltage
Logic 1
Logic 0
SYMBOL
V CC
V IH
V IL
MIN
3.0
2.2
0.0
TYP
3.3
MAX
3.6
V CC
+0.4
UNITS
V
V
V
NOTES
DC ELECTRICAL CHARACTERISTICS
(T A : See Note 10; V CC = 3.3V ± 0.3V)
PARAMETER
Input Leakage Current
I/O Leakage Current CE ≥ V IH ≤ V CC
SYMBOL
I IL
I IO
MIN
-2.0
-2.0
TYP
MAX
+2.0
+2.0
UNITS
μ A
μ A
NOTES
Output Current at 2.2V
Output Current at 0.4V
I OH
I OL
-1.0
2.0
mA
mA
Standby Current CE = 2.2V
Standby Current CE = V CC - 0.2V
Operating Current
I CCS1
I CCS2
I CCO1
150
100
250
150
50
μ A
μ A
mA
Write Protection Voltage
V TP
2.8
2.9
3.0
V
CAPACITANCE
(T A = +25 ° C)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C IN
C I/O
MIN
TYP
10
10
MAX
20
20
UNITS
pF
pF
NOTES
3 of 8
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