参数资料
型号: DS1250YP-70IND+
厂商: Maxim Integrated Products
文件页数: 4/10页
文件大小: 0K
描述: IC NVSRAM 4MBIT 70NS 34PCM
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 40
格式 - 存储器: RAM
存储器类型: NVSRAM(非易失 SRAM)
存储容量: 4M (512K x 8)
速度: 70ns
接口: 并联
电源电压: 4.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 34-PowerCap? 模块
供应商设备封装: 34-PowerCap 模块
包装: 管件
DS1250Y/AB
ABSOLUTE MAXIMUM RATINGS
Voltage on Any Pin Relative to Ground
Operating Temperature
Commercial:
Industrial:
Storage Temperature
EDIP
PowerCap
Lead Temperature (soldering, 10s)
Soldering Temperature (reflow, PowerCap)
-0.3V to +6.0V
0°C to +70°C
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
+260°C
+260°C
Note: EDIP is wave or hand soldered only.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS
(T A : See Note 10)
PARAMETER
DS1250AB Power Supply
SYMBOL
V CC
MIN
4.75
TYP
5.0
MAX
5.25
UNITS
V
NOTES
Voltage
DS1250Y Power Supply Voltage
Logic 1
Logic 0
V CC
V IH
V IL
4.5
2.2
0.0
5.0
5.5
V CC
+0.8
V
V
V
DC ELECTRICAL CHARACTERISTICS (V CC = 5V ± 5% for DS1250AB)
(T A : See Note 10) (V CC = 5V ± 10% for DS1250Y)
PARAMETER
Input Leakage Current
I/O Leakage Current CE ≥ V IH ≤ V CC
SYMBOL
I IL
I IO
MIN
-1.0
-1.0
TYP
MAX
+1.0
+1.0
UNITS
μ A
μ A
NOTES
Output Current @ 2.4V
Output Current @ 0.4V
I OH
I OL
-1.0
2.0
mA
mA
Standby Current CE =2.2V
Standby Current CE =V CC -0.5V
Operating Current
I CCS1
I CCS2
I CCO1
200
50
600
150
85
μA
μA
mA
Write Protection Voltage (DS1250AB)
Write Protection Voltage (DS1250Y)
V TP
V TP
4.50
4.25
4.62
4.37
4.75
4.5
V
V
CAPACITANCE
(T A = +25°C)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C IN
C I/O
MIN
TYP
5
5
MAX
10
10
UNITS
pF
pF
NOTES
4 of 10
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