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| 型号： | DS1251YP-70IND+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 4MBIT 70NS 34PCM |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 40 |
| 类型： | Phantom 计时芯片 |
| 特点： | 闰年，NVSRAM |
| 存储容量： | 512KB |
| 时间格式： | HH:MM:SS:hh（12/24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 电压 - 电源，电池： | 3V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 34-PowerCap? 模块 |
| 供应商设备封装： | 34-PowerCap 模块 |
| 包装： | 管件 |
DS1251/DS1251P
18 of 20
AC TEST CONDITIONS
Output Load: 50pF + 1TTL Gate
Input Pulse Levels: 0 to 3V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
NOTES:
1) WE is high for a read cycle.
2) OE = VIH or VIL. If OE = VIH during write cycle, the output buffers remain in a high-impedance state.
3) tWP is specified as the logical AND of CE and WE. tWP is measured from the latter of CE or WE going
low to the earlier of CE or WE going high.
4) tDH, t DS are measured from the earlier of CE or WE going high.
5) These parameters are sampled with a 50pF load and are not 100% tested.
6) If the CE low transition occurs simultaneously with or later than the WE low transition in Write Cycle
1, the output buffers remain in a high-impedance state during this period.
7) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high-impedance state during this period.
8) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state during this period.
9) The expected tDR is defined as cumulative time in the absence of VCC with the clock oscillator
running.
10) tWR is a function of the latter occurring edge of WE or CE.
11) Voltages are referenced to ground.
12) RST (Pin 1) has an internal pullup resistor.
13) Real-time clock modules can be successfully processed through conventional wave-soldering
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85°C. Post-solder cleaning with water-washing techniques is acceptable, provided that
ultrasonic vibration is not used.
In addition, for the PowerCap:
1) Maxim recommends that PowerCap Module bases experience one pass through solder reflow oriented
with the label side up (“live-bug”).
2) Hand soldering and touch-up: Do not touch or apply the soldering iron to leads for more than three
seconds.
To solder, apply flux to the pad, heat the lead frame pad, and apply solder. To remove the part,
apply flux, heat the lead frame pad until the solder reflows, and use a solder wick to remove
solder.
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相关代理商/技术参数 |
参数描述 |
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| DS1251YP-70IND+ | 功能描述:实时时钟 4096K NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS125222K | 制造商:Ametherm Inc 功能描述: |
| DS1254 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:2M x 8 NV SRAM with Phantom Clock |
| DS1254WB-150 | 功能描述:IC NVSRAM 16MBIT 150NS 168BGA RoHS:否 类别:集成电路 (IC) >> 时钟/计时 - 实时时钟 系列:- 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:- 类型:时钟/日历 特点:警报器，闰年，SRAM 存储容量:- 时间格式:HH:MM:SS（12/24 小时） 数据格式:YY-MM-DD-dd 接口:SPI 电源电压:2 V ~ 5.5 V 电压 - 电源，电池:- 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:8-WDFN 裸露焊盘 供应商设备封装:8-TDFN EP 包装:管件 |
| DS1254WB2-150 | 功能描述:实时时钟 2M X 8 NV SRAM w/Phantom Clock RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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