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参数资料
| 型号： | DS1258W-100 |
| 英文描述： | 3.3V 128k x 16 Nonvolatile |
| 中文描述： | 3.3 128K的× 16非易失 |
| 文件页数： | 3/8页 |
| 文件大小： | 174K |
| 代理商： | DS1258W-100 |
DS1258Y/AB
3 of 8
retain data. During power-up, when V
CC
rises above approximately 3.0V, the power switching circuit
connects external V
CC
to RAM and disconnects the lithium energy source. Normal RAM operation can
resume after V
CC
exceeds 4.75V for the DS1258AB and 4.5V for the DS1258Y.
FRESHNESS SEAL
The DS1258 devices are shipped from Dallas Semiconductor with the lithium energy sources
disconnected, guaranteeing full energy capacity. When V
CC
is first applied at a level greater than V
TP
, the
lithium energy source is enabled for battery backup operation.
ABSOLUTE MAXIMUM RATINGS*
Voltage on Any Pin Relative to Ground
-0.3V to +6.0V
Operating Temperature Range
0°C to +70°C, -40 C to +85 C for Industrial Parts
Storage Temperature Range
-40°C to +70°C, -40 C to +85 C for Industrial Parts
Soldering Temperature
See IPC/JEDEC J-STD-020A Specification
* This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
(t
A
: See Note 10)
PARAMETER
SYMBOL
DS1258AB Power Supply Voltage
V
CC
DS1258Y Power Supply Voltage
V
CC
Logic 1
V
IH
Logic 0
V
IL
DC ELECTRICAL
(V
CC
= 5V 5% for DS1258AB)
CHARACTERISTICS
(t
A
: See Note 10) (V
CC
= 5V 10% for DS1258Y)
PARAMETER
SYMBOL
Input Leakage Current
I
IL
MIN
4.75
4.5
2.2
0.0
TYP
5.0
5.0
MAX
5.25
5.5
V
CC
+0.8
UNITS NOTES
V
V
V
V
MIN
-2.0
TYP
MAX
+2.0
UNITS NOTES
A
I/O Leakage Current
CEU =CEL
V
IH
V
CC
Output Current @ 2.4V
Output Current @ 0.4V
I
IO
-1.0
+1.0
A
I
OH
I
OL
I
CCS1
I
CCS2
I
CCO1
V
TP
V
TP
-1.0
2.0
mA
mA
mA
Standby Current
CEU
,
CEL
=2.2V
0.7
1.5
Standby Current
CEU
,
CEL
=V
CC
- 0.5V
Operating Current
Write Protection Voltage (DS1258AB)
Write Protection Voltage (DS1258Y)
150
300
A
170
4.75
4.5
mA
V
V
4.50
4.25
4.62
4.37
相关PDF资料 |
PDF描述 |
|---|---|
| DS1258W-150 | 3.3V 128k x 16 Nonvolatile |
| DS1258WP-100 | 3.3V 128k x 16 Nonvolatile |
| DS1258WP-150 | CONNECTOR ACCESSORY |
| DS1258Y-100 | 128k x 16 Nonvolatile SRAM |
| DS1258Y-100-IND | 128k x 16 Nonvolatile SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1258W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100IND | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 128k x 16 Nonvolatile |
| DS1258W-100IND# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1258W-150 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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