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参数资料
| 型号： | DS1265AB |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | DRAM |
| 英文描述： | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
| 中文描述： | 1M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36 |
| 文件页数： | 1/8页 |
| 文件大小： | 65K |
| 代理商： | DS1265AB |
DS1265Y/AB
8M Nonvolatile SRAM
DS1265Y/AB
060598 1/8
FEATURES
10 years minimum data retention in the absence of
external power
Data is automatically protected during power loss
Unlimited write cycles
Low–power CMOS operation
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to
retain freshness until power is applied for the first time
Full
±
10% V
CC
operating range (DS1265Y)
Optional
±
5% V
CC
operating range (DS1265AB)
Optional industrial temperature range of –40
°
C to
+85
°
C, designated IND
PIN ASSIGNMENT
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
V
CC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
NC
NC
A18
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
36–PIN ENCAPSULATED PACKAGE
740 MIL EXTENDED
PIN DESCRIPTION
A0 – A19
DQ0 – DQ7
CE
WE
OE
V
CC
GND
NC
– Address Inputs
– Data In/Data Out
– Chip Enable
– Write Enable
– Output Enable
– Power (+5V)
– Ground
– No Connect
DESCRIPTION
The DS1265 8M Nonvolatile SRAMs are 8,388,608–bit,
fully static nonvolatile SRAMs organized as 1,048,576
words by 8 bits. Each NV SRAM has a self–contained
lithium energy source and control circuitry which
constantly monitors V
CC
for an out–of–tolerance condi-
tion. When such a condition occurs, the lithium energy
source is automatically switched on and write protection
is unconditionally enabled to prevent data corruption.
There is no limit on the number of write cycles which can
be executed and no additional support circuitry is
required for microprocessor interfacing.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1265Y | 8M Nonvolatile SRAM(8M非易失性静态RAM) |
| DS1265Y | 8M Nonvolatile SRAM |
| DS1270AB | 16M Nonvolatile SRAM(16M非易失性静态RAM) |
| DS1270Y | 16M Nonvolatile SRAM(16M非易失性静态RAM) |
| DS1270W | 3.3V 16Mb Nonvolatile SRAM |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1265AB-100 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265AB-100+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265AB-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1265AB-70 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265AB-70+ | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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