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参数资料
| 型号： | DS1265W-150+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 8MBIT 150NS 36DIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 9 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 8M（1M x 8） |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 36-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 36-EDIP |
| 包装： | 盒 |
DS1265W
9. Each DS1265W has a built-in switch that disconnects the lithium source until V CC is first applied by
the user. The expected t DR is defined as accumulative time in the absence of V CC starting from the
time power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0 ° C to+ 70 ° C. For industrial products (IND), this range is -40 ° C to
+85 ° C.
11. In a power-down condition, the voltage on any pin may not exceed the voltage on V CC .
12. t WR1 and t DH1 are measured from W E going high.
13. t WR2 and t DH2 are measured from CE going high.
14. DS1265 modules are recognized by Underwriters Laboratories (UL) under file E99151.
DC TEST CONDITIONS
Outputs open
Cycle = 200ns for operating current
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0 to 2.7V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
ORDERING INFORMATION
PART
DS1265W-100+
DS1265W-100IND+
TEMP RANGE
0°C to +70°C
-40°C to +85°C
SUPPLY
TOLERANCE
3.3V ± 0.3V
3.3V ± 0.3V
PIN-PACKAGE
36 740 EDIP
36 740 EDIP
SPEED GRADE
(ns)
100
100
+Denotes a lead(Pb)-free/RoHS-compliant package.
PACKAGE INFORMATION
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages . Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix
character, but the drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE
36 EDIP
PACKAGE CODE
MDT36+1
OUTLINE NO.
21-0245
LAND PATTERN NO.
—
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1265W-150+ | 功能描述:NVRAM 3.3V 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1265W-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 8Mb Nonvolatile SRAM |
| DS1265Y | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:8M Nonvolatile SRAM |
| DS1265Y/AB | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:8M Nonvolatile SRAM |
| DS1265Y-100 | 功能描述:NVRAM 8M NV SRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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