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参数资料
| 型号： | DS1330ABP-100 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Static RAM |
| 英文描述： | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| 封装： | POWERCAP MODULE-34 |
| 文件页数： | 10/11页 |
| 文件大小： | 218K |
| 代理商： | DS1330ABP-100 |
DS1330Y/AB
8 of 11
9. Each DS1330Y has a built-in switch that disconnects the lithium source until VCC is first applied by
the user. The expected tDR is defined as accumulative time in the absence of VCC starting from the
time power is first applied by the user.
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For
commercial products, this range is 0
°C to 70°C. For industrial products (IND), this range is -40°C to
+85
°C.
11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC.
12. tWR1 and tDH1 are measured from WE going high.
13. tWR2 and tDH2 are measured from CE going high.
14. RST and BW are open drain outputs and cannot source current. External pull-up resistors should be
connected to these pins for proper operation. Both pins will sink 10 mA.
DC TEST CONDITIONS
AC TEST CONDITIONS
Outputs Open
Output Load: 100 pF + 1TTL Gate
Cycle = 200 ns for operating current
Input Pulse Levels: 0 - 3.0V
All voltages are referenced to ground
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
DS1330 TTP - SSS - III
Operating Temperature Range
blank: 0
° to 70°
IND: -40
° to +85°C
Access Speed
70:
70 ns
100:
100 ns
Package Type
P:
34-pin PowerCap Module
VCC Tolerance
AB:
±5%
Y:
±10%
相关PDF资料 |
PDF描述 |
|---|---|
| DS1330YP-100 | 32K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DMA34 |
| DS1330ABP-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1330WP-150 | 32K X 8 NON-VOLATILE SRAM MODULE, 150 ns, DMA34 |
| DS1330YP-70 | 32K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
| DS1345ABP-70 | 128K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1330ABP-100+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330ABP-100-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:256k Nonvolatile SRAM with Battery Monitor |
| DS1330ABP-70 | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330ABP-70+ | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1330ABP-70IND | 功能描述:NVRAM 256K NV RAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
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