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| 型号： | DS1350ABP-70IND+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 4MBIT 70NS 34PCM |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 40 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 4M (512K x 8) |
| 速度： | 70ns |
| 接口： | 并联 |
| 电源电压： | 4.75 V ~ 5.25 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 34-PowerCap? 模块 |
| 供应商设备封装： | 34-PowerCap 模块 |
| 包装： | 管件 |
19-5585; Rev 10/10
DS1350Y/AB
4096k Nonvolatile SRAM
with Battery Monitor
www.maxim-ic.com
FEATURES
PIN ASSIGNMENT
?
10 years minimum data retention in the
BW
A15
A16
4
RST
V CC
WE
OE
CE
DQ7
DQ6
DQ5
A5
12
DQ4
DQ3
GND V BAT
DQ2
DQ1
DQ0
GND
?
?
?
?
?
?
?
?
absence of external power
Data is automatically protected during power
loss
Power supply monitor resets processor when
V CC power loss occurs and holds processor in
reset during V CC ramp-up
Battery monitor checks remaining capacity
daily
Read and write access times of 70ns
Unlimited write cycle endurance
Typical standby current 50 μ A
Upgrade for 512k x 8 SRAM, EEPROM, or
Flash
Lithium battery is electrically disconnected to
retain freshness until power is applied for the
1 34 A18
2 33 A17
3 32 A14
31 A13
5 30 A12
6 29 A11
7 28 A10
8 27 A9
9 26 A8
10 25 A7
11 24 A6
23
13 22 A4
14 21 A3
15 20 A2
16 19 A1
17 18 A0
34-Pin PowerCap Module (PCM)
(Uses DS9034PC+ or DS9034PCI+ PowerCap)
PIN DESCRIPTION
?
?
?
first time
Full ± 10% V CC operating range (DS1350Y)
or optional ± 5% V CC operating range
(DS1350AB)
Optional industrial temperature range of
-40 ° C to +85 ° C, designated IND
PowerCap Module (PCM) package
- Directly surface-mountable module
- Replaceable snap-on PowerCap provides
lithium backup battery
-
Standardized pinout for all nonvolatile
A0 – A18
DQ0 – DQ7
CE
W E
OE
RS T
BW
V CC
GND
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Reset Output
- Battery Warning
- Power (+5V)
- Ground
(NV) SRAM products
-
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
DESCRIPTION
The DS1350 4096k NV SRAMs are 4,194,304 bit, fully static, NV SRAMs organized as 524,288 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry, which
constantly monitors V CC for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. Additionally, the DS1350 devices have dedicated circuitry for monitoring the status of
V CC and the status of the internal lithium battery. DS1350 devices in the PowerCap Module package are
directly surface mountable and are normally paired with a DS9034PC PowerCap to form a complete NV
SRAM module. The devices can be used in place of 512k x 8 SRAM, EEPROM or Flash components.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1350ABP-70IND+ | 功能描述:NVRAM 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1350BL-100 | 功能描述:IC NVSRAM 4MBIT 100NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1350BL-100-IND | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1350BL-70 | 功能描述:IC NVSRAM 4MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1350BL-70IND | 功能描述:IC NVSRAM 4MBIT 70NS 34LPM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
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