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参数资料
| 型号： | DS1350WP-150+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 4MBIT 150NS 34PCM |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 40 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 4M (512K x 8) |
| 速度： | 150ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 34-PowerCap? 模块 |
| 供应商设备封装： | 34-PowerCap 模块 |
| 包装： | 管件 |
19-5586; Rev 10/10
DS1350W
3.3V 4096k Nonvolatile SRAM
with Battery Monitor
www.maxim-ic.com
FEATURES
PIN ASSIGNMENT
?
10 years minimum data retention in the
absence of external power
?
?
?
Data is automatically protected during power
loss
Power supply monitor resets processor when
V CC power loss occurs and holds processor in
reset during V CC ramp-up
Battery monitor checks remaining capacity
daily
BW
A15
A16
RST
V CC
WE
OE
CE
DQ7
DQ6
DQ5
1
2
3
4
5
6
7
8
9
10
11
34
33
32
31
30
29
28
27
26
25
24
A18
A17
A14
A13
A12
A11
A10
A9
A8
A7
A6
GND V BAT
?
?
?
?
?
Read and write access times of 100ns
Unlimited write cycle endurance
Typical standby current 50 μA
Upgrade for 512k x 8 SRAM, EEPROM or
Flash
Lithium battery is electrically disconnected to
DQ4
DQ3
DQ2
DQ1
DQ0
GND
12 23 A5
13 22 A4
14 21 A3
15 20 A2
16 19 A1
17 18 A0
34-Pin PowerCap Module (PCM)
(Uses DS9034PC+ or DS9034PCI+ PowerCap)
?
?
retain freshness until power is applied for the
first time
Optional industrial temperature range of
-40°C to +85°C, designated IND
PowerCap Module (PCM) package
- Directly surface-mountable module
PIN DESCRIPTION
A0-A18 - Address Inputs
DQ0-DQ7 - Data In/Data Out
CE - Chip Enable
WE - Write Enable
- Replaceable snap-on PowerCap provides
lithium backup battery
- Standardized pinout for all nonvolatile
SRAM products
- Detachment feature on PowerCap allows
easy removal using a regular screwdriver
OE
RS T
BW
V CC
GND
NC
- Output Enable
- Reset Output
- Battery Warning Output
- Power (+3.3 Volts)
- Ground
- No Connect
DESCRIPTION
The DS1350W 3.3V 4096k Nonvolatile SRAM is a 4,194,304-bit, fully static, nonvolatile SRAM
organized as 524,288 words by eight bits. Each NV SRAM has a self-contained lithium energy source
and control circuitry which constantly monitors V CC for an out-of-tolerance condition. When such a
condition occurs, the lithium energy source is automatically switched on and write protection is
unconditionally enabled to prevent data corruption. Additionally, the DS1350W has dedicated circuitry
for monitoring the status of V CC and the status of the internal lithium battery. DS1350W devices in the
PowerCap Module package are directly surface mountable and are normally paired with a DS9034PC
PowerCap to form a complete Nonvolatile SRAM module. The devices can be used in place of 512k x 8
SRAM, EEPROM or Flash components.
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| DS1250AB-100IND+ | IC NVSRAM 4096KBIT 100NS 32DIP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1350WP-150+ | 功能描述:NVRAM 3.3V 4096K NV SRAM w/Battery Monitor RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS1350WP-150IND | 功能描述:IC NVSRAM 4MBIT 150NS 34PCM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS1350WP-150-IND | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3.3V 4096K Nonvolatile SRAM with Battery Monitor |
| DS1350Y | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
| DS1350Y/AB | 制造商:未知厂家 制造商全称:未知厂家 功能描述:4096k Nonvolatile SRAM with Battery Monitor |
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