参数资料
型号: DS1381
厂商: DALLAS SEMICONDUCTOR
元件分类: DRAM
英文描述: NV RAMport(非易失性RAM口)
中文描述: 2K X 8 NON-VOLATILE SRAM, 100 ns, PDIP24
文件页数: 9/16页
文件大小: 353K
代理商: DS1381
BUF04
REV. 0
–9–
FUNCTIONAL DESCRIPTION
The BUF04 is a closed-loop voltage buffer based on a current
feedback architecture. Its high open-loop transimpedance, high
output current drive capability, and its low input offset voltage
makes it useful in a variety of applications, such as buffering the
inputs of sampling and flash A/D converters, audio and video
line drivers, active filters, and precision op amp hoosters.
A transistor-level equivalent circuit for the BUF04 is illustrated
in Figure 29. The input stage consists of a pair of emitter
follower transistors, Q1 and Q2, whose outputs drive a second
set of transistors, Q3 and Q4. The emitters of Q3 and Q4 are
connected together through diodes, D1 and D2, to form a low
impedance input for the feedback signal (in current mode) from
the output stage. The outputs of Q3 and Q4 are then
“mirrored” to Q5 and Q6 which form the gain stage of the
BUF04. The signal is taken from the collectors of Q5 and Q6
which drive a “Darlington-connected” output stage made up of
transistors Q7-Q10. Three R-C networks (R1–C1, R2–C2, and
R3–C3) form feed-forward paths which bypass certain sections
of the BUF04 for improved high frequency performance and
capacitive load drive capability. Since the signal conveyed
internally in the BUF04 is a current, the frequency response
and slew rate of the BUF04 are insensitive to supply voltage
variations.
12
0
–12
10k
100k
1000M
100M
10M
1M
FREQUENCY – Hz
3
6
9
–9
–6
–3
G
V
S
= ±15V
T
A
= +25
°
C
R
L
= 150
C
L
= 100pF
C
L
= 50pF
C
L
= 0pF
150
CL
10
BUF04
Figure 28. Bandwidth vs. Frequency
Q11
Q13
Q5
Q3
Q7
Q9
Q2
Q1
C1
C3
R3
D2
D1
Q4
R2
Q10
Q8
Q6
Q14
Q12
V
IN
V
OUT
C2
R
FB
100
20
20
Figure 29. Transistor-Level Equivalent Circuit
An interesting feature of the BUF04 architecture is the use of
“slew-enhancement” transistors, Q11–Q14. Under normal small
signal (V
IN
< 2 V
be
s) conditions, these transistors are normally
“OFF.” In large signals, high speed transient applications where
the input signal is > 2 V
be
s, these transistors turn on and literally
“brute-force” the output to follow the input. When the input
signal drops below 2 V
be
s, the transistors return to their
normally “OFF” state.
10
100
0%
90
50mV
10ns
50mV
INPUT
(50mV/DIV)
OUTPUT
(50mV/DIV)
V
S
= ±15V, R
L
= 2k
, C
L
= 15pF
Figure 25. Small-Signal Transient Response
10
100
0%
90
2V
50ns
2V
INPUT
(2V/DIV)
OUTPUT
(2V/DIV)
V
S
= ±15V, R
L
= 2k
, C
L
= 15pF
DLY 375.0ns
Figure 26. Large-Signal Transient Response
0.1
0.010
0.001
D
0.0001
20
100
1k
10k
20k
07 MAR 93 21:31:53
AUDIO PRECISION BUF04 THD+N (%) vs FREQ (Hz)
T
A
B
C
VS= ±15V
LPF=80kHz
: VIN = 0.775Vrms, RL= 150W
: VIN = 0.775Vrms, RL= 600W
A : VIN = 7.75Vrms, RL= 150W
B : VIN = 7.75Vrms, RL= 600W
B
A
C
D
C
D
Figure 27. THD + Noise vs. Amplitude
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