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参数资料
| 型号： | DS1501YSN |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Timer or RTC |
| 英文描述： | 1 TIMER(S), REAL TIME CLOCK, PDSO28 |
| 封装： | 0.720 INCH, PLASTIC, SOIC-28 |
| 文件页数： | 25/30页 |
| 文件大小： | 291K |
| 代理商： | DS1501YSN |
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DS1501/DS1511
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DATA READ MODE
The DS1501/DS1511 is in the read mode whenever CE (chip enable) is low and WE (write enable) is
high. The device architecture allows ripple-through access to any valid address location. Valid data will
be available at the DQ pins within tAA (Address Access) after the last address input is stable, providing
that CE and OE access times are satisfied. If CE or OE access times are not met, valid data will be
available at the latter of chip enable access (tCEA) or at output enable access time (tOEA). The state of the
data input/output pins (DQ) is controlled by CE and OE . If the outputs are activated before tAA, the data
lines are driven to an intermediate state until tAA. If the address inputs are changed while CE and OE
remain valid, output data will remain valid for output data hold time (tOH) but will then go indeterminate
until the next address access. (See Table 1.)
DATA WRITE MODE
The DS1501/DS1511 is in the write mode whenever WE and CE are in their active state. The start of a
write is referenced to the latter occurring transition of WE or CE . The addresses must be held valid
throughout the cycle. CE or WE must return inactive for a minimum of tWR prior to the initiation of a
subsequent read or write cycle. Data in must be valid tDS prior to the end of the write and remain valid for
tDH afterward. In a typical application, the OE signal will be high during a write cycle. However, OE
can be active provided that care is taken with the data bus to avoid bus contention. If OE is low prior to a
high to low transition on WE , the data bus can become active with read data defined by the address
inputs. A low transition on WE will then disable the outputs tWEZ after WE goes active. (See Table 1.)
DATA RETENTION MODE
The DS1501/DS1511 is fully accessible and data can be written and read only when VCC is greater than
VPF. However, when VCC falls below the power-fail point VPF (point at which write protection occurs)
the internal clock registers and SRAM are blocked from any access. While in the data retention mode, all
inputs are don’t cares and outputs go to a high-Z state, with the possible exception of KS , PWR , SQW,
and RST . If VPF is less than VBAT and VBAUX, the device power is switched from VCC to the greater of
VBAT and VBAUX when VCC drops below VPF. If VPF is greater than VBAT and VBAUX, the device power is
switched from VCC to the larger of VBAT and VBAUX when VCC drops below the larger of VBAT and VBAUX.
RTC operation and SRAM data are maintained from the battery until VCC is returned to nominal levels.
(See Table 1.)
All control, data, and address signals must be no more than 0.3 volts above VCC.
AUXILIARY BATTERY
The VBAUX input is provided to supply power from an auxiliary battery for the DS1501/DS1511 kickstart
and SQW output features in the absence of VCC. This power source must be available in order to use
these auxiliary features when VCC is not applied to the device.
This auxiliary battery may be used as the primary backup power source for maintaining the
clock/calendar and extended user RAM. This occurs if the VBAT pin is at a lower voltage than VBAUX. If
the DS1501/DS1511 is to be backed-up using a single battery with the auxiliary features enabled, then
VBAUX should be used and VBAT should be grounded. If VBAUX is not to be used, it should be grounded.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1511W | 1 TIMER(S), REAL TIME CLOCK, DMA28 |
| DS1511Y | 1 TIMER(S), REAL TIME CLOCK, DMA28 |
| DS1501YE | 1 TIMER(S), REAL TIME CLOCK, PDSO28 |
| DS1501WS | 1 TIMER(S), REAL TIME CLOCK, PDSO28 |
| DS1501Y | 1 TIMER(S), REAL TIME CLOCK, PDIP28 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1501YSN/T&R | 制造商:Maxim Integrated Products 功能描述:REAL TIME CLOCK PARALLEL 256BYTE 28SOIC - Tape and Reel |
| DS1501YSN+ | 功能描述:实时时钟 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1501YSN+T&R | 制造商:Maxim Integrated Products 功能描述:IC RTC WDOG Y2K 5V IND 28-SOIC |
| DS1501YSN+T&R | 功能描述:实时时钟 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1501YZ+ | 功能描述:实时时钟 Y2K-Compliant Watchdog RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
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