- 您现在的位置：买卖IC网 > Datasheet目录322 > DS1609-50+ (Maxim Integrated)IC SRAM 2KBIT 50NS 24DIP Datasheet资料下载
参数资料
| 型号： | DS1609-50+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 2KBIT 50NS 24DIP |
| 标准包装： | 16 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM - 双端口，异步 |
| 存储容量： | 2K (256 x 8) |
| 速度： | 50ns |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-DIP（0.600"，15.24mm） |
| 供应商设备封装： | 24-PDIP |
| 包装： | 管件 |
DS1609
DS1609
Dual Port RAM
FEATURES
PIN ASSIGNMENT
? Totally asynchronous 256–byte dual port memory
? Multiplexed address and data bus keeps pin count
low
? Dual port memory cell allows random access with
minimum arbitration
? Each port has standard independent RAM control sig-
nals
? Fast access time
? Low power CMOS design
? 24–pin DIP or 24–pin SOIC surface mount package
PORT A
AD7 A
AD6 A
AD5 A
AD4 A
AD3 A
AD2 A
AD1 A
AD0 A
WE A
CE A
OE A
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
PORT B
V CC
OE B
CE B
WE B
AD0 B
AD1 B
AD2 B
AD3 B
AD4 B
AD5 B
AD6 B
AD7 B
? Both CMOS and TTL compatible
DS1609
24–PIN DIP (600 MIL)
See Mech. Drawings
? Operating temperature of –40 ° C to +85 ° C
PORT A
Section
PORT B
? Standby current of 100 nA @ 25 ° C makes the device
ideal for battery backup or battery operate applica-
tions.
AD7 A
AD6 A
AD5 A
AD4 A
AD3 A
AD2 A
AD1 A
A D0 A
WE A
CE A
OE A
GND
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
V CC
OE B
CE B
WE B
AD0 B
AD1 B
AD2 B
AD3 B
AD4 B
AD5 B
AD6 B
AD7 B
DS1609S
24–PIN SOIC (300 MIL)
See Mech. Drawings
Section
PIN DESCRIPTION
DESCRIPTION
AD0–AD7
CE
WE
OE
V CC
GND
–
–
–
–
–
–
Port address/data
Port enable
Write enable
Output enable
+5 volt supply
Ground
The DS1609 is a random access 256–byte dual port
memory designed to connect two asyncronous ad-
dress/data buses together with a common memory ele-
ment. Both ports have unrestricted access to all
by three control signals: output enable, write enable,
and port enable. The device is packaged in plastic
24–pin DIP and 24–pin SOIC. Output enable access
time of 50 ns is available when operating at 5 volts.
256 bytes of memory, and with modest system disci-
pline no arbitration is required. Each port is controlled
020499 1/7
相关PDF资料 |
PDF描述 |
|---|---|
| DS2016R-100+ | IC SRAM 16KBIT 100NS 24SOIC |
| DS2030L-100# | IC NVSRAM 256KBIT 100NS 256BGA |
| DS2030W-100# | IC NVSRAM 256KBIT 100NS 256BGA |
| DS2030Y-70# | IC NVSRAM 256KBIT 70NS 256BGA |
| DS2045L-100# | IC NVSRAM 1MBIT 100NS 256BGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1609-50+ | 功能描述:RAM其它 Dual Port RAM RoHS:否 制造商:Freescale Semiconductor 封装:Tray |
| DS1609N-35 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| DS1609N-50 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| DS1609S-35 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x8 Dual-Port SRAM |
| DS1609S-50 | 功能描述:RAM其它 RoHS:否 制造商:Freescale Semiconductor 封装:Tray |
发布紧急采购，3分钟左右您将得到回复。