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参数资料
| 型号： | DS1646-120+ |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 8/12页 |
| 文件大小： | 0K |
| 描述： | IC RAM TIMEKEEP NV 120NS 32-EDIP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 12 |
| 类型： | 时钟/日历 |
| 特点： | 闰年，NVSRAM |
| 存储容量： | 128KB |
| 时间格式： | HH:MM:SS（24 小时） |
| 数据格式： | YY-MM-DD-dd |
| 接口： | 并联 |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 32-DIP 模块（0.600"，15.24mm） |
| 供应商设备封装： | 32-EDIP |
| 包装： | 管件 |
| 产品目录页面： | 1432 (CN2011-ZH PDF) |
DS1646/DS1646P
5 of 12
CLOCK ACCURACY (DIP MODULE)
The DS1646 is guaranteed to keep time accuracy to within ±1 minute per month at 25°C. The RTC is
calibrated at the factory by Dallas Semiconductor using nonvolatile tuning elements, and does not require
additional calibration. For this reason, methods of field clock calibration are not available and not
necessary. Clock accuracy is also affected by the electrical environment and caution should be taken to
place the RTC in the lowest level EMI section of the PCB layout. For additional information refer to
Application Note 58.
CLOCK ACCURACY (POWERCAP MODULE)
The DS1646 and DS9034PCX are each individually tested for accuracy. Once mounted together, the
module will typically keep time accuracy to within ±1.53 minutes per month (35 ppm) at 25°C. Clock
accuracy is also affected by the electrical environment and caution should be taken to place the RTC in
the lowest level EMI section of the PCB layout. For additional information refer to Application Note 58.
1646 REGISTER MAP—BANK1 Table 2
ADDRESS
DATA
FUNCTION
B7
B6
B5
B4
B3
B2
B1
B0
1FFFF
—
Year
00–99
1FFFE
X
—
Month
01–12
1FFFD
X
-
—
Date
01–31
1FFFC
X
FT
X
—
Day
01–07
1FFFB
X
—
Hour
00–23
1FFFA
X
—
Minutes
00–59
1FFF9
OSC
—
Seconds
00–59
1FFF8
W
R
X
Control
A
OSC
= Stop Bit
R = Read Bit
FT = Frequency Test
W = Write Bit
X = Unused
Note: All indicated “X” bits are unused but must be set to “0” during write cycles to ensure proper clock
operation.
RETRIEVING DATA FROM RAM OR CLOCK
The DS1646 is in the read mode whenever WE (write enable) is high; CE (chip enable) is low. The
device architecture allows ripple-through access to any of the address locations in the NVSRAM. Valid
data will be available at the DQ pins within tAA after the last address input is stable, providing that the CE
and OE access times and states are satisfied. If CE or OE access times are not met, valid data will be
available at the latter of chip-enable access (tCEA) or at output enable access time (tOEA). The state of the
data input/output pins (DQ) is controlled by CE and OE . If the outputs are activated before tAA, the data
lines are driven to an intermediate state until tAA. If the address inputs are changed while CE and OE
remain valid, output data will remain valid for output data hold time (tOH) but will then go indeterminate
until the next address access.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1647P-120 | IC RAM TIMEKEEP NV 120NS 34-PCM |
| DS1670S | IC CTRLR SYSTEM PORTABLE 20-SOIC |
| DS1672S-3/T&R | IC TIMEKEEPER 3V 32-BIT 8-SOIC |
| DS1673S-3 | IC CTRLR SYSTEM PORT 3V 20-SOIC |
| DS1677E | IC CTRLR SYSTEM PORT 20-TSSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1646-120+ | 功能描述:实时时钟 NV Timekeeping RAM RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1646-15 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1646H-120 | 功能描述:实时时钟 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1646L-12 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
| DS1646L-120 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:NVRAM (Battery Based) |
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