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参数资料
| 型号： | DS1685S-5 |
| 厂商： | DALLAS SEMICONDUCTOR |
| 元件分类： | Timer or RTC |
| 英文描述： | 1 TIMER(S), REAL TIME CLOCK, PDSO24 |
| 封装： | SOIC-24 |
| 文件页数： | 11/39页 |
| 文件大小： | 290K |
| 代理商： | DS1685S-5 |
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DS1685/DS1687
19 of 39
During interval 5, the system is fully powered down.
Battery backup of the clock calendar and
nonvolatile RAM is in effect and IRQ is tri-stated, and monitoring of wake-up and kickstart takes place.
If PRS=1, PWR stays active, otherwise if PRS=0 PWR is tri-stated.
RAM CLEAR
The DS1685/DS1687 provides a RAM clear function for the 242 bytes of user RAM. When enabled, this
function can be performed regardless of the condition of the VCC pin.
The RAM clear function is enabled or disabled via the RAM Clear Enable bit (RCE; bank 1, register
04BH). When this bit is set to a logic 1, the 242 bytes of user RAM will be cleared (all bits set to 1)
when an active low transition is sensed on the RCLR pin. This action will have no effect on either the
clock/calendar settings or upon the contents of the extended RAM. The RAM clear Flag (RF, bank 1,
register 04AH) will be set when the RAM clear operation has been completed. If VCC is present at the
time of the RAM clear and RIE=1, the IRQ line will also be driven low upon completion. The interrupt
condition can be cleared by writing a 0 to the RF bit. The IRQ line will then return to its inactive high
level provided there are no other pending interrupts. Once the RCLR pin is activated, all read/write
accesses are locked out for a minimum recover time, specified as tREC in the Electrical Characteristics
section.
When RCE is cleared to 0, the RAM clear function is disabled. The state of the RCLR pin will have no
effect on the contents of the user RAM, and transitions on the RCLR pin have no effect on RF.
128 X 8 EXTENDED RAM
The DS1685/DS1687 provides 128 x 8 of on-chip SRAM which is controlled as nonvolatile storage
sustained from a lithium battery. On power-up, the RAM is taken out of write protect status by the
internal power OK signal (POK) generated from the write protect circuitry.
The on-chip 128 x 8 nonvolatile SRAM is accessed via the eight multiplexed address/data lines AD7 to
AD0. Access to the SRAM is controlled by two on-chip latch registers. One register is used to hold the
SRAM address, and the other register is used to hold read/write data. The SRAM address space is from
00h to 7Fh.
Access to the extended 128 x 8 RAM is controlled via two of the Dallas registers shown in Figure 4. The
Dallas registers in bank 1 must first be selected by setting the DV0 bit in register A to a logic 1. The 7-bit
address of the RAM location to be accessed must be loaded into the extended RAM address register
located at 50h. Data in the addressed location may be read by performing a read operation from location
53h, or written to by performing a write operation to location 53h. Data in any addressed location may be
read or written repeatedly without changing the address in location 50h.
相关PDF资料 |
PDF描述 |
|---|---|
| DS1685EN-3 | 1 TIMER(S), REAL TIME CLOCK, PDSO24 |
| DS1685E-3 | 1 TIMER(S), REAL TIME CLOCK, PDSO24 |
| DS1685EN-5 | 1 TIMER(S), REAL TIME CLOCK, PDSO24 |
| DS1685-5 | 1 TIMER(S), REAL TIME CLOCK, PDIP24 |
| DS1685SN-3 | 1 TIMER(S), REAL TIME CLOCK, PDSO24 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1685S-5/T&R | 功能描述:实时时钟 RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1685S-5/TR | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3V/5V Real-Time Clocks |
| DS1685S-5_12 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:3V/5V Real-Time Clocks |
| DS1685S-5+ | 功能描述:实时时钟 3V/5V RTC RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 总线接口:I2C 日期格式:DW:DM:M:Y 时间格式:HH:MM:SS RTC 存储容量:64 B 电源电压-最大:5.5 V 电源电压-最小:1.8 V 最大工作温度:+ 85 C 最小工作温度: 安装风格:Through Hole 封装 / 箱体:PDIP-8 封装:Tube |
| DS1685S-5+T& | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:3V/5V Real-Time Clocks |
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