参数资料
型号: DS1855B-010+T&R
厂商: Maxim Integrated Products
文件页数: 16/21页
文件大小: 0K
描述: IC POT/MEM DIG NV 10/10K 16BGA
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 1,000
接片: 100,256
电阻(欧姆): 10k,100k
电路数: 2
温度系数: 标准值 750 ppm/°C
存储器类型: 非易失
接口: I²C(设备位址)
电源电压: 2.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 16-LBGA,CSPBGA
供应商设备封装: 16-CSBGA(4x4)
包装: 带卷 (TR)
DS1855
4 of 21
MEMORY ORGANIZATION
The DS1855’s serial EEPROM is internally organized with 256 words of 1 byte each. Each word requires
an 8-bit address for random word addressing. The byte at address F9h determines the wiper setting for
potentiometer 0, which contains 100 positions. Writing values above 63h to this address sets the wiper to
its uppermost position, but the MSB is ignored. The byte at address F8h determines the wiper setting for
potentiometer 1, which contains 256 positions (00h to FFh). Address locations FAh though FFh are
reserved and should not be written.
MEMORY
LOCATION
NAME OF
MEMORY
LOCATION
FUNCTION OF MEMORY LOCATION
00h – F7h
User Memory
General-purpose user memory.
F8h
Potentiometer 1 Setting Writing to this byte controls the setting of potentiometer 1, a 256-
position pot. Valid settings are 00h to FFh.
F9h
Potentiometer 0 Setting Writing to this byte controls the setting of potentiometer 0, a 100-
position pot. Valid settings are 00h to 63h. MSB is ignored.
FAh
Software Lock
Configuration Byte
The three lower bits in this byte can be used to set write-protection
to the 256-byte memory block.
B2: Writing this bit to a 1 protects the upper page of memory. If
this bit is set, memory locations F8h to FFh are configured for
write-protection.
B1: Writing this bit to a 1 protects the upper block of memory. If
this bit is set, memory locations 80h to F7h are configured for
write-protection. The upper page must be unlocked in order to
modify the locking of this portion of memory.
B0: Writing this bit to a 1 protects the lower block of memory. If
this bit is set, memory locations 00h to 7Fh are configured for
write-protection. The upper page must be unlocked in order to
modify the locking of this portion of memory.
B2 B1 B0
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