参数资料
型号: DS18S20-PAR+T&R
厂商: Maxim Integrated
文件页数: 18/20页
文件大小: 0K
描述: IC THERM MICROLAN HI-PREC TO-92
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,000
感应温度: -55°C ~ 125°C
输出类型: 数字
电源电压: 3 V ~ 5.5 V
精确度: ±0.5°C
封装/外壳: TO-226-3、TO-92-3(TO-226AA)成形引线
供应商设备封装: TO-92-3
包装: 带卷 (TR)
DS18S20-PAR
ABSOLUTE MAXIMUM RATINGS*
Voltage on any pin relative to ground
Operating temperature
Storage temperature
Soldering temperature
–0.5V to +6.0V
–55 ° C to +100 ° C
–55 ° C to +125 ° C
See J-STD-020A Specification
*These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(-55°C to +100°C; V PU =3.0V to 5.5V)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS NOTES
Pullup Supply Voltage
Thermometer Error
V PU
t ERR
-10°C to +85°C
3.0
5.5
±?
V 1,2
°C 3
-55°C to +100°C
±2
Input Logic Low
Input Logic High
V IL
V IH
-0.3
3.0
+0.8
5.5
V
V
1,4,5
1,6
Sink Current
I L
V I/O =0.4V
4.0
mA
1
Active Current
DQ Input Current
Drift
I DQA
I DQ
1
5
±0.2
1.5
mA
μA
°C
7
8
9
NOTES:
1.
2.
3.
4.
5.
6.
7.
8.
9.
All voltages are referenced to ground.
The Pullup Supply Voltage specification assumes that the pullup device (resistor or transistor) is
ideal, and therefore the high level of the pullup is equal to V PU . In order to meet the V IH spec of the
DS18S20-PAR, the actual supply rail for the strong pullup transistor must include margin for the
voltage drop across the transistor when it is turned on; thus: V PU_ACTUAL = V PU_IDEAL + V TRANSISTOR .
See typical performance curve in Figure 15.
Logic low voltages are specified at a sink current of 4 mA.
To always guarantee a presence pulse under low voltage parasite power conditions, V ILMAX may have
to be reduced to as low as 0.5V.
Logic high voltages are specified at a source current of 1 mA.
Active current refers to supply current during active temperature conversions or EEPROM writes.
DQ line is high (“hi-Z” state).
Drift data is based on a 1000 hour stress test at 125°C.
AC ELECTRICAL CHARACTERISTICS: NV MEMORY
(-55°C to +100°C; V PU =3.0V to 5.5V)
PARAMETER
NV Write Cycle Time
EEPROM Writes
EEPROM Data Retention
SYMB
OL
t wr
N EEWR
t EEDR
CONDITION
-55°C to +55°C
-55°C to +55°C
MIN
50k
10
TYP
2
MAX
10
UNITS
ms
writes
years
18 of 20
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