参数资料
型号: DS18S20
厂商: MAXIM INTEGRATED PRODUCTS INC
元件分类: Switch/Digital Output Temperature Sensor
英文描述: DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 0.50Cel, RECTANGULAR, THROUGH HOLE MOUNT
封装: TO-92, 3 PIN
文件页数: 21/23页
文件大小: 252K
代理商: DS18S20
DS18S20
7 of 23
MEMORY
The DS18S20’s memory is organized as shown in Figure 7. The memory consists of an SRAM
scratchpad with nonvolatile EEPROM storage for the high and low alarm trigger registers (TH and TL).
Note that if the DS18S20 alarm function is not used, the TH and TL registers can serve as general-purpose
memory. All memory commands are described in detail in the DS18S20 Function Commands section.
Byte 0 and byte 1 of the scratchpad contain the LSB and the MSB of the temperature register,
respectively. These bytes are read-only. Bytes 2 and 3 provide access to TH and TL registers. Bytes 4 and
5 are reserved for internal use by the device and cannot be overwritten; these bytes will return all 1s when
read. Bytes 6 and 7 contain the COUNT REMAIN and COUNT PER C registers, which can be used to
calculate extended resolution results as explained in the Operation—Measuring Temperature section.
Byte 8 of the scratchpad is read-only and contains the CRC code for bytes 0 through 7 of the scratchpad.
The DS18S20 generates this CRC using the method described in the CRC Generation section.
Data is written to bytes 2 and 3 of the scratchpad using the Write Scratchpad [4Eh] command; the data
must be transmitted to the DS18S20 starting with the least significant bit of byte 2. To verify data
integrity, the scratchpad can be read (using the Read Scratchpad [BEh] command) after the data is
written. When reading the scratchpad, data is transferred over the 1-Wire bus starting with the least
significant bit of byte 0. To transfer the TH and TL data from the scratchpad to EEPROM, the master must
issue the Copy Scratchpad [48h] command.
Data in the EEPROM registers is retained when the device is powered down; at power-up the EEPROM
data is reloaded into the corresponding scratchpad locations. Data can also be reloaded from EEPROM to
the scratchpad at any time using the Recall E
2
[B8h] command. The master can issue “read-time slots”
(see the 1-Wire Bus System section) following the Recall E
2 command and the DS18S20 will indicate the
status of the recall by transmitting 0 while the recall is in progress and 1 when the recall is done.
Figure 7. DS18S20 Memory Map
SCRATCHPAD
(POWER-UP STATE)
Byte 0
Temperature LSB (AAh)
Byte 1
Temperature MSB (00h)
EEPROM
Byte 2
TH Register or User Byte 1*
TH Register or User Byte 1
Byte 3
TL Register or User Byte 2*
TL Register or User Byte 2
Byte 4
Reserved (FFh)
Byte 5
Reserved (FFh)
Byte 6
COUNT REMAIN (0Ch)
Byte 7
COUNT PER °C (10h)
Byte 8
CRC*
*Power-up state depends on value(s) stored in EEPROM.
(85°C)
相关PDF资料
PDF描述
DS18S20-SL+T&R DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 0.50Cel, RECTANGULAR, THROUGH HOLE MOUNT
DS18S20Z/T&R DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), 0.50Cel, RECTANGULAR, SURFACE MOUNT
DS1963L-F5 SPECIALTY MEMORY CIRCUIT, MEDB2
DS1963S SPECIALTY MEMORY CIRCUIT, MEDB2
DS1985-F3 2K X 8 EEPROM 3V, RDB2
相关代理商/技术参数
参数描述
DS18S20/T&R 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述:IC THERM MICROLAN HI PREC TO-92
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