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参数资料
| 型号： | DS18S20Z+T&R |
| 厂商： | Maxim Integrated |
| 文件页数： | 21/23页 |
| 文件大小： | 0K |
| 描述： | IC THERM MICROLAN HI-PREC 8-SOIC |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 感应温度： | -55°C ~ 125°C |
| 输出类型： | 数字 |
| 电源电压： | 3 V ~ 5.5 V |
| 精确度： | ±0.5°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOIC |
| 包装： | 带卷 (TR) |
DS18S20
t CONV
Time to Strong Pullup On
t SPON
AC ELECTRICAL CHARACTERISTICS—NV MEMORY
(V DD = 3.0V to 5.5V, T A = -55°C to +100°C, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN
NV Write Cycle Time t WR
EEPROM Writes N EEWR -55°C to +55°C 50k
EEPROM Data Retention t EEDR -55°C to +55°C 10
AC ELECTRICAL CHARACTERISTICS
(V DD = 3.0V to 5.5V; T A = -55°C to +125°C, unless otherwise noted.)
PARAMETER SYMBOL CONDITIONS MIN TYP
Temperature Conversion
Time
Start Convert T
Command Issued
Time Slot t SLOT 60
Recovery Time t REC 1
Write 0 Low Time t LOW0 60
Write 1 Low Time t LOW1 1
Read Data Valid t RDV
Reset Time High t RSTH 480
Reset Time Low t RSTL 480
Presence-Detect High t PDHIGH 15
Presence-Detect Low t PDLOW 60
Capacitance C IN/OUT
TYP
2
MAX
750
10
120
120
15
15
60
240
25
MAX
10
UNITS
ms
μ s
μ s
μ s
μ s
μ s
μ s
μ s
μ s
μ s
μ s
pF
UNITS
ms
writes
years
NOTES
1
1
1
1
1
1
1
1, 2
1
1
NOTES:
1) See the timing diagrams in Figure 17.
2) Under parasite power, if t RSTL > 960 μ s, a power-on reset may occur.
Figure 16. Typical Performance Curve
DS18S20 Typical Error Curve
0.5
0.4
0.3
0.2
0.1
+3s Error
0
-0.1
0
10
20
30
40
50
60
70
-0.2
-0.3
-0.4
-0.5
Mean Error
Temperature (°C)
21 of 23
-3s Error
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