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参数资料
| 型号： | DS1921H-F5# |
| 厂商： | Maxim Integrated |
| 文件页数： | 30/45页 |
| 文件大小： | 0K |
| 描述： | IBUTTON THERMOCHRON F5 |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| RoHS指令信息： | IButton RoHS Compliance Plan |
| 标准包装： | 8 |
| 系列： | iButton® |
| 存储容量： | 512B |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 产品目录页面： | 1431 (CN2011-ZH PDF) |
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DS1921H/Z
INITIALIZATION PROCEDURE (RESET AND PRESENCE PULSES) Figure 14
After the bus master has released the line it goes into receive mode (RX). Now, the 1-Wire bus is pulled
to V PUP via the pull-up resistor or, in case of a DS2480B driver, by active circuitry. When the threshold
V TH is crossed, the DS1921H/Z waits for t PDH and then transmits a presence pulse by pulling the line low
for t PDL . To detect a presence pulse, the master must test the logical state of the 1-Wire line at t MSP .
The t RSTH window must be at least the sum of t PDHMAX , t PDLMAX , and t RECMIN . Immediately after t RSTH is
expired, the DS1921H/Z is ready for data communication. In a mixed population network, t RSTH should
be extended to minimum 480μs at standard speed and 48μs at Overdrive speed to accommodate other 1-
Wire devices.
Read/Write Time Slots
Data communication with the DS1921H/Z takes place in time slots that carry a single bit each. Write time
slots transport data from bus master to slave. Read time-slots transfer data from slave to master. The
definitions of the write and read time slots are illustrated in Figure 15.
All communication begins with the master pulling the data line low. As the voltage on the 1-Wire line
falls below the threshold V TL , the DS1921H/Z starts its internal timing generator that determines when
the data line will be sampled during a write time slot and how long data will be valid during a read time
slot.
Master to Slave
For a write-one time slot, the voltage on the data line must have crossed the V TH threshold after the
write-one low time t W1LMAX is expired. For a write-zero time slot, the voltage on the data line must stay
below the V TH threshold until the write-zero low time t W0LMIN is expired. The voltage on the data line
should not exceed V ILMAX during the entire t W0L or t W1L window. After the V TH threshold has been
crossed, the DS1921H/Z needs a recovery time t REC before it is ready for the next time slot.
30 of 45
相关PDF资料 |
PDF描述 |
|---|---|
| DS1921K# | KIT IBUTTON THERMOCHRON |
| DS1922E-F5# | IBUTTON TEMP LOGGER 4KBit F5 |
| DS1922L-F5# | IBUTTON TEMP LOGGER |
| DS1923-F5# | IBUTTON TEMP/HUMIDITY LOGGER F5 |
| DS1961S-F3# | IBUTTON EEPROM 1KBit F3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS1921H-F5# | 功能描述:iButton Thermochron High Res iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1921H-F5/A1C | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1921H-F5+A1C | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1921H-F50 | 功能描述:iButton RoHS:否 存储类型:SRAM 存储容量:512 B 组织: 工作电源电压:3 V to 5.25 V 接口类型:1-Wire 最大工作温度:+ 85 C 尺寸:17.35 mm x 5.89 mm 封装 / 箱体:F5 MicroCan 制造商:Maxim Integrated |
| DS1921K | 功能描述:存储器 IC 开发工具 RoHS:否 制造商:STMicroelectronics 产品:Reference Boards 工具用于评估:M24LR64-R 存储容量:64 kbit 存储类型:EEPROM 工作电源电压:1.8 V to 5.5 V |
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