参数资料
型号: DS1921Z-F5#
厂商: Maxim Integrated
文件页数: 31/45页
文件大小: 0K
描述: IBUTTON THERMOCHRON F5
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
RoHS指令信息: IButton RoHS Compliance Plan
标准包装: 8
系列: iButton®
存储容量: 512B
存储器类型: NVSRAM(非易失 SRAM)
产品目录页面: 1431 (CN2011-ZH PDF)
READ/WRITE TIMING DIAGRAM Figure 15
DS1921H/Z
Write-One Time Slot
V PUP
V IHMASTER
V TH
V TL
V ILMAX
t W1L
0V
t F
RESISTOR
ε
t SLOT
MASTER
Write-Zero Time Slot
V PUP
V IHMASTER
V TH
V TL
V ILMAX
t W0L
0V
t F
t SLOT
ε
t REC
RESISTOR
MASTER
Read-Data Time Slot
Slave to Master
A read-data time slot begins like a write-one time slot. The voltage on the data line must remain below
V TL until the read low time t RL is expired. During the t RL window, when responding with a 0, the
DS1921H/Z will start pulling the data line low; its internal timing generator determines when this pull-
down ends and the voltage starts rising again. When responding with a 1, the DS1921H/Z will not hold
the data line low at all, and the voltage starts rising as soon as t RL is over.
The sum of t RL + δ (rise time) on one side and the internal timing generator of the DS1921H/Z on the
other side define the master sampling window (t MSRMIN to t MSRMAX ) in which the master must perform a
read from the data line. For most reliable communication, t RL should be as short as permissible and the
master should read close to but no later than t MSRMAX . After reading from the data line, the master must
wait until t SLOT is expired. This guarantees sufficient recovery time t REC for the DS1921H/Z to get ready
for the next time slot.
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