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| 型号： | DS2016R-100+ |
| 厂商： | Maxim Integrated |
| 文件页数： | 7/8页 |
| 文件大小： | 0K |
| 描述： | IC SRAM 16KBIT 100NS 24SOIC |
| 标准包装： | 31 |
| 格式 - 存储器： | RAM |
| 存储器类型： | SRAM |
| 存储容量： | 16K (2K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 2.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 24-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 24-SOIC W |
| 包装： | 管件 |
DS2016
TIMING DIAGRAM: DATA RETENTION - POWER-UP, POWER-DOWN Figure 1
SEE NOTE 8
NOTES:
1) WE is high for read cycles.
2) OE = V IH or V IL . If OE = V IH during write cycle, the output buffers remain in a high impedance state.
3) t WP is specified as the logical AND of CE and WE . t WP is measured from the latter of CE or WE
going low to the earlier of CE or WE going high.
4) t DH and t DS are measured from the earlier of CE or WE going high.
5) If the CE low transition occurs simultaneously with or later than the WE low transition, the output
buffers remain in a high impedance state.
6) If the CE high transition occurs prior to or simultaneously with the WE high transition, the output
buffers remain in a high impedance state.
7) If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition,
the output buffers remain in a high impedance state.
8) If the V IH level of CE is 2.0V during the period that V CC voltage is going down from 4.5V to 2.7V,
I CCS1 current flows.
9) The DS2016 maintains full operation from 5.5V to 2.7V. The electrical characteristics tables show
two tested and guaranteed points of operation. For operation between 4.5V and 3.5V, use the
composite worst case characteristics from both 5V and 3V operation for design purposes.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground.
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0V - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
7 of 8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2016R-100+ | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS2016R-150 | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS2016R-150+ | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS2016S-100 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:IC-SM-16K CMOS SRAM |
| DS201B10A10 | 制造商:ABB Low Voltage Products and Systems 功能描述:System Pro M RCBO DS201 B10 A10 |
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