- 您现在的位置：买卖IC网 > Datasheet目录322 > DS2030L-100# (Maxim Integrated)IC NVSRAM 256KBIT 100NS 256BGA Datasheet资料下载
参数资料
| 型号： | DS2030L-100# |
| 厂商： | Maxim Integrated |
| 文件页数： | 11/12页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 256KBIT 100NS 256BGA |
| 标准包装： | 18 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-BBGA |
| 供应商设备封装： | 256-BGA（27x27） |
| 包装： | 托盘 |
DS2030L 3.3V Single-Piece 256kb
Nonvolatile SRAM
Recommended Reflow Temperature Profile
Applications Information
PROFILE FEATURE
Average ramp-up rate
(T L to T P )
Preheat
- Temperature min (T Smin )
- Temperature max (T Smax )
- Time (min to max) (ts)
T Smax to T L
- Ramp-up rate
Time maintained above:
- Temperature (T L )
- Time (t L )
Peak temperature (T P )
Time within 5 ° C of actual peak
temperature (T P )
Ramp-down rate
Time 25 ° C to peak temperature
Sn-Pb EUTECTIC
ASSEMBLY
3 ° C/second max
100 ° C
150 ° C
60 to 120 seconds
183 ° C
60 to 150 seconds
225 +0/-5 ° C
10 to 30 seconds
6 ° C/second max
6 minutes max
Power-Supply Decoupling
To achieve the best results when using the DS2030L,
decouple the power supply with a 0.1μF capacitor. Use
a high-quality, ceramic surface-mount capacitor if pos-
sible. Surface-mount components minimize lead induc-
tance, which improves performance, while ceramic
capacitors have adequately high frequency response
for decoupling applications.
Using the Open-Drain RST Output
The RST output is open drain, and therefore requires a
pullup resistor to realize a high logic output level. Pullup
resistor values between 1k ? and 10k ? are typical.
Battery Charging/Lifetime
The DS2030L charges an ML battery to maximum
capacity in approximately 96 hours of operation when
V CC is greater than V TP . Once the battery is charged,
its lifetime depends primarily on the V CC duty cycle.
The DS2030L can maintain data from a single, initial
charge for up to 16 weeks. Once recharged, this deep-
discharge cycle can be repeated up to 20 times, pro-
ducing a worst-case service life of 6 years. More typical
Note: All temperatures refer to top side of the package, mea-
sured on the package body surface.
duty cycles are of shorter duration, enabling the
DS2030L to be charged hundreds of times, therefore
extending the service life well beyond 6 years.
Recommended Cleaning Procedures
The DS2030L may be cleaned using aqueous-based
cleaning solutions. No special precautions are needed
when cleaning boards containing a DS2030L module.
Removal of the topside label violates the environmen-
tal integrity of the package and voids the warranty of
the product.
____________________________________________________________________
11
相关PDF资料 |
PDF描述 |
|---|---|
| DS2030W-100# | IC NVSRAM 256KBIT 100NS 256BGA |
| DS2030Y-70# | IC NVSRAM 256KBIT 70NS 256BGA |
| DS2045L-100# | IC NVSRAM 1MBIT 100NS 256BGA |
| DS2045W-100# | IC NVSRAM 1MBIT 100NS 256BGA |
| DS2045Y-70# | IC NVSRAM 1MBIT 70NS 256BGA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2030L-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2030W | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:3.3V Single-Piece 256k Nonvolatile SRAM |
| DS2030W-100 | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2030W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS2030Y | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Single-Piece 256kb Nonvolatile SRAM |
发布紧急采购，3分钟左右您将得到回复。