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参数资料
| 型号： | DS2227-100 |
| 英文描述： | Flexible NV SRAM Stik |
| 中文描述： | 灵活的非易失SRAM装饰贴 |
| 文件页数： | 9/10页 |
| 文件大小： | 191K |
| 代理商： | DS2227-100 |
DS2227
9 of 10
NOTES:
1.
WE
is high for a read cycle.
2.
OE
= V
IH
or V
IL
. If
OE
= V
IH
during write cycle, the output buffers remain in a high impedance
state.
3.
t
WP
is specified as the logical AND of
CE
and
WE
.
4.
t
DH
, t
DS
are measured from the earlier of
CE
or
WE
going high.
5.
t
DH
is measured from
WE
going high. If
CE
is used to terminate the write cycle then t
DH
= 20 ns.
6.
If the
CE
low transition occurs simultaneously with or later than the
WE
low transition, the
output buffers remain in a high impedance state in this period.
7.
If the
CE
high transition occurs prior to or simultaneously with the
WE
high transition, the output
buffers remain in a high impedance state in this period.
8.
If the
WE
is low or the
WE
low transition occurs prior to or simultaneously with the
CE
low
transition, the output buffers remain in a high impedance state in this period.
9.
Each DS2227 is marked with a 4-digit date code AABB. AA designates the year of manufacture.
BB designates the week of manufacture. The minimum expected t
DR
is defined as starting at the
date of manufacture.
10.
Timings are valid only when
CE
is tied low.
DC TEST CONDITIONS
Outputs Open
Cycle = 200 ns
All Voltages are Referenced to Ground
AC TEST CONDITIONS
Output Load: 100 pF + 1TTL gate
Input Pulse Levels: 0 - 3.0 V
Timing Measurements Reference Levels:
Input - 1.5V
Output - 1.5V
Input Pulse Rise and Fall Times: 5 ns
ORDERING INFORMATION
相关PDF资料 |
PDF描述 |
|---|---|
| DS2227-120 | Flexible NV SRAM Stik |
| DS2227 | Flexible NV SRAM Stik |
| DS2229 | Word-Wide 8 Meg SRAM Stik |
| DS2252T | Secure Microcontroller Module |
| DS2282 | T1 FDL Controller/Monitor Stik |
相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2227-120 | 功能描述:IC NVSRAM 4MBIT 120NS 72SIMM RoHS:否 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:150 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 线串口 电源电压:2.5 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-VFDFN 裸露焊盘 供应商设备封装:8-DFN（2x3） 包装:管件 产品目录页面:1445 (CN2011-ZH PDF) |
| DS2227-70 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Flexible NV SRAM Stik |
| DS2228-100 | 功能描述:静态随机存取存储器 RoHS:否 制造商:Cypress Semiconductor 存储容量:16 Mbit 组织:1 M x 16 访问时间:55 ns 电源电压-最大:3.6 V 电源电压-最小:2.2 V 最大工作电流:22 uA 最大工作温度:+ 85 C 最小工作温度:- 40 C 安装风格:SMD/SMT 封装 / 箱体:TSOP-48 封装:Tray |
| DS2229 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:Word-Wide 8 Meg SRAM Stik |
| DS2229-100 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:x16 SRAM Module |
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