参数资料
型号: DS2430AX-S/T&R
厂商: Maxim Integrated
文件页数: 16/19页
文件大小: 0K
描述: IC EEPROM 256BIT 4FCHIP
标准包装: 2,500
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 256(32 x 8)
接口: 1 线 串行
工作温度: -40°C ~ 85°C
封装/外壳: 4-UFBGA,FCBGA
供应商设备封装: 4-覆晶(2.39x1.73)
包装: 带卷 (TR)
DS2430A
ABSOLUTE MAXIMUM RATINGS
Voltage Range on DATA to Ground -0.5V to +6.0V
DATA Sink Current 20mA
Operating Temperature Range -40°C to +85°C
Junction Temperature +150°C
Storage Temperature Range -55°C to +125°C
Lead Temperature (soldering, 10s) +300°C
Soldering Temperature (reflow)
TSOC +260°C
TO-92 +250°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to the
absolute maximum rating conditions for extended periods may affect device reliability.
V TL
(Notes 5, 6, 7)
V TH
(Notes 5, 6, 9)
t REH
t PDH
t PDL
t MSP
At 85°C (worst case)
t DR
At 85°C (worst case)
V PUP -
1.8V
V PUP -
1.1V
ELECTRICAL CHARACTERISTICS
( T A = -40 ° C to +85 ° C, unless otherwise noted.) (Note 1)
PARAMETER SYMBOL CONDITIONS
DATA PIN GENERAL DATA
1-Wire Pullup Voltage V PUP (Notes 2)
1-Wire Pullup Resistance R PUP (Notes 2, 3)
Input Capacitance C IO (Notes 4, 5)
Input Load Current I L DATA pin at V PUP
High-to-Low Switching
Threshold
Input Low Voltage V IL (Notes 2, 8)
Low-to-High Switching
Threshold
Switching Hysteresis V HY (Notes 5, 6, 10)
Output Low Voltage V OL At 4mA (Note 11)
Recovery Time t REC R PUP = 2.2k ? (Notes 2,12)
Rising-Edge Hold-off (Notes 5, 13)
Time
Timeslot Duration t SLOT (Notes 2, 14)
DATA PIN, 1-WIRE RESET, PRESENCE DETECT CYCLE
Reset Low Time t RSTL (Note 2)
Presence Detect High
Time
Presence Detect Low
Time
Presence Detect Sample (Notes 2, 15)
Time
DATA PIN, 1-Wire WRITE
Write-0 Low Time t W0L (Notes 2, 16)
Write-1 Low Time t W1L (Notes 2, 16)
DATA PIN, 1-Wire READ
Read Low Time t RL (Notes 2, 17)
Read Sample Time t MSR (Notes 2, 17)
EEPROM
Programming Current I PROG (Notes 5, 18)
Programming Time t PROG (Note 19)
Write/Erase Cycles At 25°C
(Endurance) N CY
(Notes 20, 21)
Data Retention (Notes 22,
23, 24)
MIN
2.8
0.3
0.05
0.46
1.0
0.21
5
0.5
65
480
15
60
60
60
1
1
t RL + δ
200k
50k
40
TYP
MAX UNITS
5.25 V
2.2 k ?
1000 pF
15 μA
V
0.5 V
V
1.70 V
0.4 V
μs
5.0 μs
μs
960 μs
60 μs
240 μs
75 μs
120 - ε μs
15 - ε μs
15 - δ μs
15 μs
0.5 mA
10 ms
?
years
16 of 19
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