参数资料
型号: DS2431X-S+
厂商: Maxim Integrated Products
文件页数: 7/27页
文件大小: 0K
描述: IC EEPROM 1KBIT 6UCSP
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 2,500
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 1K(256 x 4)
接口: 1 线 串行
工作温度: -40°C ~ 85°C
封装/外壳: 6-UFBGA,CSPBGA
供应商设备封装: 6-UCSPR(3x3)
包装: 托盘
DS2431
1024-Bit, 1-Wire EEPROM
POLYNOMIAL = X 8 + X 5 + X 4 + 1
1ST
STAGE
2ND
STAGE
3RD
STAGE
4TH
STAGE
5TH
STAGE
6TH
STAGE
7TH
STAGE
8TH
STAGE
X 0
X 1
X 2
X 3
X 4
X 5
X 6
X 7
X 8
INPUT DATA
Figure 4. 1-Wire CRC Generator
Memory Access
Data memory and registers are located in a linear
address space, as shown in Figure 5. The data memo-
ry and the registers have unrestricted read access.
The DS2431 EEPROM array consists of 18 rows of 8
bytes each. The first 16 rows are divided equally into
four memory pages (32 bytes each). These four pages
are the primary data memory. Each page can be indi-
vidually set to open (unprotected), write protected, or
EPROM mode by setting the associated protection
byte in the register row. As a factory default, the entire
data memory is unprotected and its contents are unde-
fined. The last two rows contain protection registers
and reserved bytes. The register row consists of 4 pro-
tection control bytes, a copy-protection byte, the facto-
ry byte, and 2 user byte/manufacture ID bytes. The
manufacturer ID can be a customer-supplied identifi-
cation code that assists the application software in
identifying the product the DS2431 is associated with.
ADDRESS RANGE
0000h to 001Fh
0020h to 003Fh
0040h to 005Fh
0060h to 007Fh
0080h*
0081h*
0082h*
0083h*
0084h*
0085h
0086h
0087h
TYPE
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R/(W)
R
R/(W)
R/(W)
DESCRIPTION
Data Memory Page 0
Data Memory Page 1
Data Memory Page 2
Data Memory Page 3
Protection Control Byte Page 0
Protection Control Byte Page 1
Protection Control Byte Page 2
Protection Control Byte Page 3
Copy Protection Byte
Factory Byte. Set at Factory.
User Byte/Manufacturer ID
User Byte/Manufacturer ID
PROTECTION CODES
55h: Write Protect P0; AAh: EPROM Mode P0;
55h or AAh: Write Protect 80h
55h: Write Protect P1; AAh: EPROM Mode P1;
55h or AAh: Write Protect 81h
55h: Write Protect P2; AAh: EPROM Mode P2;
55h or AAh: Write Protect 82h
55h: Write Protect P3; AAh: EPROM Mode P3;
55h or AAh: Write Protect 83h
55h or AAh: Copy Protect 0080h:008Fh, and Any
Write-Protected Pages
AAh: Write Protect 85h, 86h, 87h;
55h: Write Protect 85h; Unprotect 86h, 87h
0088h to 008Fh — Reserved
*Once programmed to AAh or 55h this address becomes read only. All other codes can be stored, but neither write protect the
address nor activate any function.
Figure 5. Memory Map
Maxim Integrated
7
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