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参数资料
| 型号： | DS2726G+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 13/16页 |
| 文件大小： | 0K |
| 描述： | IC PROT LI+ 5-10CELL 32-TQFP |
| 标准包装： | 2,500 |
| 功能： | 过压/欠压保护 |
| 电池化学： | 锂离子（Li-Ion） |
| 电源电压： | 5 V ~ 50 V |
| 工作温度： | -20°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 32-WQFN 裸露焊盘 |
| 供应商设备封装： | 32-TQFN-EP（7x7） |
| 包装： | 带卷 (TR) |
5-Cell to 10-Cell Li+ Protector with
Cell Balancing
I SC =
1 μA × R DOC
Setting the Short-Circuit
Threshold and Delay Time
The DS2726 allows the selection of a short-circuit cur-
rent threshold. This threshold is set using a resistor
from the RSC pin to the positive terminal of the cell
stack. The RSC pin sinks 1μA (nominal). The short-cir-
cuit comparator triggers when the voltage on the SNS
pin is less than the voltage on the RSC pin. For exam-
ple, assume a 500k Ω resistor is used on RSC, along
with a DC FET with an R DS_ON of 10m Ω . This corre-
sponds to an RSC voltage of 500k Ω x 1μA = 0.5V.
Because the FET is 10m Ω , the short-circuit threshold is
0.5V/10m Ω = 50A:
1μA × RSC
R DS _ ON
The DS2726 allows for a delayed reaction to a short-cir-
cuit event. The short threshold must persist for the
entire delay time before the DC FET begins to turn off
(actual turn-off time varies based on the gate capaci-
tance of the DC FET; see the DC pin drive capabilities
in the DC Electrical Characteristics table for more
details). The short-circuit delay time is set using a
capacitor on the CSCD pin. The short-circuit delay time
can be calculated by the equation:
t SCD = C SCD x 500k Ω
Be sure to select threshold and delay times that fall
within the safe operating area of the FETs chosen for
DC and CC.
Setting the Discharge
Overcurrent Threshold
and Delay Time
The DS2726 allows the selection of a discharge over-
current threshold. This threshold is set using a resistor
from the RDOC pin to the positive terminal of the cell
stack. The RDOC pin sinks 1μA (nominal). The overcur-
rent circuit comparator triggers when the voltage on the
SNS pin is less than the voltage on the RDOC pin. For
example, assume a 200k Ω resistor is used on RDOC,
along with a DC FET with an R DS_ON of 10m Ω . This
corresponds to a voltage on RDOC of 200k Ω x 1μA =
0.2V. Because the FET is 10m Ω , the discharge overcur-
rent threshold is 0.2V/10m Ω = 20A:
I DOC =
R DS _ ON
The DS2726 allows for a delayed reaction to a dis-
charge overcurrent event. The discharge overcurrent
threshold must persist for the entire delay time before
the DC FET begins to turn off (actual turn-off time varies
based on the gate capacitance of the DC FET; see DC
pin drive capabilities in the DC Electrical
Characteristics table for more details). The discharge
overcurrent delay time is set using a capacitor on the
CDOCD pin. The discharge overcurrent delay can be
calculated by the equation:
t DOCD = C DOCD x 32M Ω
Be sure to select threshold and delay times that fall
within the safe operating area for the FETs chosen for
DC and CC.
If the voltage on the CDOCD pin is within approximately
1V of V CC or GND, the condition is considered to be a
fault, and the CC and DC outputs are disabled. This
results in a delay before enabling the FETs when the
part awakens from Sleep Mode. This delay occurs until
the voltage on CDOCD reaches an acceptable level.
This is a function of the capacitor on CDOCD. The
CDOCD startup delay is in addition to a typical regulator
startup of 100μs, and is given by the equation:
STARTUP DELAY ≈ 100μs + C DOCD x 1.65M Ω
Be sure to select threshold and delay times that fall
within the safe operating area for the FETs chosen for
DC and CC.
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