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参数资料
| 型号： | DS2731E+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 3/20页 |
| 文件大小： | 0K |
| 描述： | IC MANAGEMENT BACKUP 28-TSSOP |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 功能： | 备份管理 |
| 电池化学： | 锂离子（Li-Ion） |
| 电源电压： | 10.8 V ~ 13.2 V |
| 工作温度： | -20°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 28-SOIC（0.173"，4.40mm 宽）裸露焊盘 |
| 供应商设备封装： | 28-TSSOP 裸露焊盘 |
| 包装： | 带卷 (TR) |
Cache-Memory Battery-Backup Management IC
CHARGER CIRCUIT ELECTRICAL CHARACTERISTICS (continued)
(V IN = +10.8V to +13.2V, T A = -20°C to +70°C, unless otherwise noted. Typical values are at T A = +25°C.)
PARAMETER
Enable Hysteresis ( ENS , ENC)
Pulldown Resistance ( ENS , ENC)
LED Outputs Low
(CHARGE, DONE, FAULT)
SYMBOL
V HYS-EN
R PD
V OL
I OL = 10mA
CONDITIONS
MIN
35
100
TYP
70
200
MAX
140
300
1.0
UNITS
mV
k
V
Fault LED Flash Rate
f FAULT
4
Hz
Preconditioning Charge
Threshold
Preconditioning Hysteresis
Preconditioning Charge Current
Precondition Timeout
Charge-Current Range
(RSET Resistance)
Charge-Current Accuracy
V MIN
V HYS
I PRE
t PRE
I CHG
I ERR-CHG
(Note 1)
V BATT+ < V MIN
Charge current determined by RSET
(Note 7)
RSET resistor tolerance 0.1%,
R SNS = 0.050
2.55
50
5.0
27
0.5
5.0
-5
2.60
100
10.0
30
2.70
15.0
33
1.5
1.6
+5
V
mV
% of
I CHG
min
A
k
%
Overcurrent Clamp
I OVERCURRENT RSET = 0 or R SNS = 0
1.7
2.5
A
Constant-Voltage Threshold
Range
MARGIN Pin Leakage
Constant-Voltage Charge
Accuracy
V CV
I LEAKAGE
V ERR-CV
Charge voltage determined by MARGIN
pin voltage
3.6
-2
-25.0
4.2
4.6
+2
+25.0
V
μA
mV
Charge Termination (CV) Current
I TERMINATE In constant-voltage mode
4.0
5.0
6.0
% of
I CHG
Charge-Restart Threshold
V DELTA
(Note 8)
94
95
96
% of
V CV
Safety Timeout Range
(STMR Resistance)
Safety Timeout Error
t SAFETY
t ERR-SAFETY R STMR = 22,000
1
22
-5
10
220
+5
hr
k
%
Battery Charger Switching Period
Charger Undervoltage Lockout
High-Side MOSFET
On - Resistance
t SW-CHG
V UVLO-CHG
R DSON-CP
Full load (1.5A) (Note 9)
I CHG = 1A, V IN = 10.8V
(Note 10)
0.83
8
1.00
10
0.4
μs
V
Low-Side MOSFET On-Resistance R DSON-CN
I CHG = 1A, V IN = 10.8V (Note 10)
0.15
Reverse Leakage of Charge FET
(CHG1, CHG2)
Forward Leakage of Charge FET
(CHG1, CHG2)
I REVERSE
I FORWARD
V IN = 0V, V CV = 4.2V, ENC = 0V
V IN = 12V, V CV = 4.2V, ENC = 0V
10
10
μA
μA
SNS Leakage Current
Startup Time
I LKG-CHG
t START
No charge current, V IN = 12V
Using typical application components
-2
1
+2
μA
ms
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