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参数资料
| 型号： | DS2761BE+025/T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 11/24页 |
| 文件大小： | 0K |
| 描述： | IC MON BATT LI-ION HP 16-TSSOP |
| 标准包装： | 1,000 |
| 功能： | 电池监控器 |
| 电池化学： | 锂离子（Li-Ion） |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 16-TSSOP |
| 包装： | 带卷 (TR) |
DS2761
MEMORY
The DS2761 has a 256-byte linear address space with registers for instrumentation, status, and control in
the lower 32 bytes, with lockable EEPROM and SRAM memory occupying portions of the remaining
address space. All EEPROM and SRAM memory is general purpose except addresses 30h, 31h, and 33h,
which should be written with the default values for the protection register, status register, and current
offset register, respectively. When the MSB of any two-byte register is read, both the MSB and LSB are
latched and held for the duration of the read data command to prevent updates during the read and ensure
synchronization between the two register bytes. For consistent results, always read the MSB and the LSB
of a two-byte register during the same read data command sequence.
EEPROM memory is shadowed by RAM to eliminate programming delays between writes and to allow
the data to be verified by the host system before being copied to EEPROM. All reads and writes to/from
EEPROM memory actually access the shadow RAM. In unlocked EEPROM blocks, the write data
command updates shadow RAM. In locked EEPROM blocks, the write data command is ignored. The
copy data command copies the contents of shadow RAM to EEPROM in an unlocked block of EEPROM
but has no effect on locked blocks. The recall data command copies the contents of a block of EEPROM
to shadow RAM regardless of whether the block is locked or not.
Table 3. MEMORY MAP
ADDRESS (HEX)
00
01
02–06
07
08
09–0B
0C
0D
0E
0F
10
11
12–17
18
19
1A–1F
20–2F
30–3F
40–7F
80–8F
90–FF
DESCRIPTION
Protection Register
Status Register
Reserved
EEPROM Register
Special Feature Register
Reserved
Voltage Register MSB
Voltage Register LSB
Current Register MSB
Current Register LSB
Accumulated Current Register MSB
Accumulated Current Register LSB
Reserved
Temperature Register MSB
Temperature Register LSB
Reserved
EEPROM, block 0
EEPROM, block 1
Reserved
SRAM
Reserved
READ/WRITE
R/W
R
R/W
R/W
R
R
R
R
R/W
R/W
R
R
R/W*
R/W*
R/W
* Each EEPROM block is read/write until locked by the LOCK command, after which it is read-only.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2761BX | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:High-Precision Li+ Battery Monitor |
| DS2761BX-025 | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:High-Precision Li+ Battery Monitor |
| DS2761BX-025/T&R | 制造商:Rochester Electronics LLC 功能描述: 制造商:Maxim Integrated Products 功能描述:IC MON BATT LI-ION HP FLIP-CHIP |
| DS2761BX-025/T&R | 功能描述:IC MON BATT LI-ION HP FLIP-CHIP RoHS:否 类别:集成电路 (IC) >> PMIC - 电池管理 系列:- 标准包装:1 系列:- 功能:充电管理 电池化学:锂离子（Li-Ion）、锂聚合物（Li-Pol） 电源电压:3.75 V ~ 6 V 工作温度:-40°C ~ 85°C 安装类型:表面贴装 封装/外壳:SC-74A，SOT-753 供应商设备封装:SOT-23-5 包装:剪切带 (CT) 产品目录页面:669 (CN2011-ZH PDF) 其它名称:MCP73831T-2ACI/OTCT |
| DS2761K | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Li+ Battery Monitor Evaluation Kit |
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