参数资料
型号: DS2761BX-025/T&R
厂商: Maxim Integrated Products
文件页数: 9/24页
文件大小: 0K
描述: IC MON BATT LI-ION HP FLIP-CHIP
标准包装: 10,000
功能: 电池监控器
电池化学: 锂离子(Li-Ion)
电源电压: 2.5 V ~ 5.5 V
工作温度: -40°C ~ 85°C
安装类型: 表面贴装
封装/外壳: 12-UFBGA,FCBGA
供应商设备封装: 12-覆晶
包装: 带卷 (TR)
DS2761
When the internal sense resistor is used, the DS2761 maintains the current accumulator in units of amp-
hours, with a resolution of 0.25mAhrs and full-scale range of ± 8.2Ahrs. When using an external sense
resistor, the DS2761 maintains the current accumulator in units of volt-hours, with a resolution of
6.25 m Vhrs and a full scale range of ± 205mVhrs.
The current accumulator is a read/write register that can be altered by the host system as needed.
Figure 5. CURRENT ACCUMULATOR FORMAT
MSB—Address 10
LSB—Address 11
S
2 14 2 13 2 12 2 11 2 10 2 9
2 8
2 7
2 6
2 5
2 4
2 3
2 2
2 1
2 0
MSb
LSb
MSb
LSb
Units: 0.25mAhrs for Internal Sense Resistor
6.25 m Vhrs for External Sense Resistor
CURRENT OFFSET COMPENSATION
Current measurement and current accumulation are both internally compensated for offset on a continual
basis minimizing error resulting from variations in device temperature and voltage. Additionally, a
constant bias can be utilized to alter any other sources of offset. This bias resides in EEPROM address
33h in two’s-complement format and is subtracted from each current measurement. The current offset
bias is applied to both the internal and external sense resistor configurations. The factory default for the
current offset bias is a value of 0.
Figure 6. CURRENT OFFSET BIAS
Address 33
S
2 6
2 5
2 4
2 3
2 2
2 1
2 0
MSb
LSb
Units: 0.625mA for Internal Sense Resistor
15.625 m V for External Sense Resistor
VOLTAGE MEASUREMENT
The DS2761 continually measures the voltage between pins V IN and V SS over a range of 0 to 4.75V. The
voltage register is updated in two’s-complement format every 3.4ms with a resolution of 4.88mV.
Voltages above the maximum register value are reported as the maximum value. The voltage register
format is shown in Figure 7.
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