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参数资料
| 型号： | DS2786G-5+T&R |
| 厂商： | Maxim Integrated Products |
| 文件页数： | 15/22页 |
| 文件大小： | 0K |
| 描述： | IC FUEL GAUGE OCV-BASED 10-TDFN |
| 产品培训模块： | Lead (SnPb) Finish for COTS Obsolescence Mitigation Program |
| 标准包装： | 2,500 |
| 功能： | 燃料，电量检测计/监控器 |
| 电池化学： | 锂离子（Li-Ion）、锂聚合物（Li-Pol） |
| 电源电压： | 2.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 10-WFDFN 裸露焊盘 |
| 供应商设备封装： | 10-TDFN-EP（3x4） |
| 包装： | 带卷 (TR) |
DS2786 Stand-Alone OCV-Based Fuel Gauge
Figure 19. Last OCV Register Format
Address 16h
2 7
2 6
2 5
2 4
2 3
2 2
2 1
2 0
MSb
Units:
LSb
0.5%
The Learn Delta Percent Threshold allows the application to select how large of a cell capacity change is required
before the new cell capacity value is learned. The difference between the present OCV measurement and the Last
OCV measurement must be greater than the Learn Delta Percent Threshold value for a Learn to occur. This
prevents IC measurement resolution from adding error to the Learned Cell Capacity value. It is recommended this
register be set to a value of at least 50%.
Figure 20. Learn Delta Percent Threshold
Address 7Eh
2 7
2 6
2 5
2 4
2 3
2 2
2 1
2 0
MSb
Units:
LSb
0.5%
MEMORY MAP
The DS2786 has memory space with registers for instrumentation, status, and control. When the MSB of a two-
byte register is read, both the MSB and LSB are latched and held for the duration of the read data command to
prevent updates during the read and ensure synchronization between the two register bytes. For consistent results,
always read the MSB and the LSB of a two-byte register during the same read data command sequence.
Memory locations 60h through 7Fh are EEPROM storage locations. EEPROM memory is shadowed by RAM to
eliminate programming delays between writes and to allow the data to be verified by the host system before being
copied to EEPROM. The Read Data and Write Data protocols to/from EEPROM memory addresses access the
shadow RAM. Setting the RCALL bit in the Command Register (FEh) initiate data transfer from the EEPROM to the
shadow RAM.
Setting the COPY bit in the Command Register initiates data transfer from the shadow RAM to the EEPROM. An
external voltage supply must be provided on the VPROG pin prior to writing the COPY bit. The DS2786 requires
the COPY bit be reset to 0 within the t PROG time window to properly program EEPROM. Resetting COPY too soon
may prevent a proper write of the cells. Resetting COPY too late may degrade EEPROM Copy Endurance.
The DS2786 uses shadow RAM data for fuel gauge calculations. Fuel gauge information can be changed in the
application by writing the shadow RAM locations. Afterwards the SOCV bit should be written to reset the fuel
gauge. Note that any reset of the I.C. will cause the Shadow RAM data to be restored from EEPROM.
Figure 21. EEPROM Access via Shadow RAM
Copy
EEPROM
Serial
Interface
Read
Write
Shadow RAM
Recall
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS2786K | 功能描述:电源管理IC开发工具 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| DS2786K-SMP | 功能描述:电源管理IC开发工具 RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| DS2788 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Stand-Alone Fuel-Gauge IC with LED Display Drivers |
| DS2788_09 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:Stand-Alone Fuel-Gauge IC with LED Display Drivers |
| DS2788E+ | 功能描述:电池管理 Stand-Alone F-Gauge w/LED Display Drvrs RoHS:否 制造商:Texas Instruments 电池类型:Li-Ion 输出电压:5 V 输出电流:4.5 A 工作电源电压:3.9 V to 17 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装 / 箱体:VQFN-24 封装:Reel |
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