参数资料
型号: DS28DG02G-3C+T
厂商: Maxim Integrated
文件页数: 2/34页
文件大小: 0K
描述: IC EEPROM 2KBIT 2MHZ 36TQFN
标准包装: 2,500
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (256 x 8)
速度: 2MHz
接口: SPI 3 线串行
电源电压: 2.2 V ~ 5.25 V
工作温度: -40°C ~ 85°C
封装/外壳: 36-WFQFN 裸露焊盘
供应商设备封装: 36-TQFN 裸露焊盘(6x6)
包装: 带卷 (TR)
DS28DG02: 2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground
Maximum Current SO, ALMZ, RSTZ, WDOZ Pins
Maximum Current Each PIO Pin
Maximum GND and V CC Current
Operating Temperature Range
Junction Temperature
Storage Temperature Range
Soldering Temperature
-0.5V, +6V
? 20mA
? 50mA
270mA
-40°C to +85°C
+150°C
-55°C to +125°C
See IPC/JEDEC J-STD-020
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only,
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is
not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device.
ELECTRICAL CHARACTERISTICS
(T A = -40°C to +85°C.)
PARAMETER
Supply Voltage
Battery Voltage
Battery Current (V BAT = 3.0V,
Note 1)
SYMBOL
V CC
V BAT
I BAT
CONDITIONS
Battery monitor off
Battery monitor enabled
(Note 1)
RTC oscillator off
RTC oscillator on
RTC oscillator on, +25°C
MIN
2.2
2.7
1.5
TYP
3.0
0.4
MAX
5.25
5.25
V CC
2
10
4.7
UNITS
V
V
μA
SPI idle, ALMZ, WDOZ,
Standby Current (Note 2)
I CCS
RTSZ high, V CC = 5.25V,
RTC oscillator on, all
60
100
μA
PIOs grounded
Reading EEPROM at 2
Mbps, ALMZ, WDOZ,
Operating Current
I CCA
RTSZ high, V CC = 5.25V,
RTC oscillator on, all
550
800
μA
PIOs grounded
Programming Current
I PROG
V CC = 5.25V
600
1000
μA
V CC Monitor Trip Point
V CC Monitor Trip-Point
Tolerance
V CC Monitor Hysteresis
V TRIP
V TRIPTOL
V HYST
(Note 3)
+25°C
-40°C to +85°C
2.97
-1.5
-2.5
0.4
3.05
0.5
3.14
+1.5
+2.5
0.6
V
%V TRIP
%V TRIP
Power-Up Wait Time
t POIP
60
μs
EEPROM
Programming Time
t PROG
10
ms
Endurance
Data Retention
N CYCLE
t RET
At +25°C (Notes 4, 5)
At +85°C (Notes 5, 6)
200k
40
years
REAL-TIME CLOCK
Frequency Deviation
? F
(Notes 5, 7)
-46
+46
PPM
PIO PINS (See Figures 21, 22, 23)
LOW-Level Output Current at
V OL = 0.5V (Note 8)
HIGH-Level Output Current
(Note 8)
I OL
I OH
V CC = 2.2V
V CC = 3.3V
V CC = 5.25V
V OH = 2.4V, V CC = 3.3V
V OH = 4.5V, V CC = 5.25V
6
12.5
19
6.5
12.5
9.5
22.0
30
11.0
18.0
mA
mA
2 of 34
相关PDF资料
PDF描述
VE-B5H-CV-S CONVERTER MOD DC/DC 52V 150W
VE-B4Z-CU-S CONVERTER MOD DC/DC 2V 80W
GRM219R71C104KA01D CAP CER 0.1UF 16V 10% X7R 0805
DS1258AB-100# IC NVSRAM 2MBIT 100NS 40DIP
LTC4216CMS#TRPBF IC CNTRLR HOT SWAP 10-MSOP
相关代理商/技术参数
参数描述
DS28E01-100 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:带SHA-1引擎保护的1K位1-Wire EEPROM
DS28E01-100_12 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1Kb Protected 1-Wire EEPROM with SHA-1 Engine
DS28E01-100+ 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8
DS28E01G-100+R 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine
DS28E01G-100+T 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine