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参数资料
| 型号： | DS28DG02G-3C+T |
| 厂商： | Maxim Integrated |
| 文件页数： | 24/34页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 2MHZ 36TQFN |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 2MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 2.2 V ~ 5.25 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 36-WFQFN 裸露焊盘 |
| 供应商设备封装： | 36-TQFN 裸露焊盘（6x6） |
| 包装： | 带卷 (TR) |
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DS28DG02: 2Kb SPI EEPROM with PIO, RTC, Reset, Battery Monitor, and Watchdog
RFSH Refresh PIO Registers
The volatile PIO-related registers from address 120h to 125h are preset with their power-on default values stored in
EEPROM when the device powers up. The fastest way for the master to restore the power-on state without power-
cycling the DS28DG02 is through the RFSH instruction. The RFSH timing diagram for both SPI communication
modes is shown in Figure 17. The PIO register restore begins when the last bit of the instruction code is clocked
into the device (highlighted SCK transition) and ends after the power-up wait time (t POIP ) is over.
Figure 17. Refresh PIO Registers Timing
CSZ
Refresh, Mode (0,0)
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1
1
SO
CSZ
High Impedance
Refresh, Mode (1,1)
0
1
2
3
4
5
6
7
SCK
SI
0
0
0
0
0
1
1
1
SO
High Impedance
WRITE Write to Memory and PIO
From the perspective of the master, the DS28DG02 is a memory device with memory ranges made of EEPROM,
SRAM and ROM. Depending on the memory type, the behavior of the device upon receiving a write instruction
varies. Table 3 shows the cases that need to be distinguished.
Table 3. Write Access Cases
STARTING ADDRESS
000h to 0FFh
100h to 10Fh
110h to 11Fh
120h to 135h
136h to 1FFh
DESCRIPTION
User memory (can be write-protected through BP1:BP0).
EEPROM registers (reserved and power-on default values, no write-protection).
Read-only memory.
SRAM, PIO, and NV SRAM (may be write-protected through RPROT).
Nonexisting memory.
The four blocks of user memory consist of 16 segments of 16 bytes each. The first segment begins at address
000h and ends at address 00Fh; segment 2 ranges from 010h to 01Fh, etc. Upon receiving a write instruction with
an address targeting the user memory, any data bytes that follow the address are written to a 16-byte buffer,
beginning at an offset that is determined by the 4 least significant bits of the target address. This buffer is initialized
(pre-loaded) with data from the addressed 16-byte EEPROM segment. Incoming data replaces pre-loaded data.
With every byte received, the buffer's write pointer is incremented. This allows updating from 1 to 16 bytes starting
anywhere within the segment. If the write pointer has reached its maximum value of 1111b and additional data is
received, the pointer wraps around (rolls over) and the incoming data is written to the beginning of the EEPROM
write buffer and continuing. If the target memory is not write-protected AND the WEN bit of the SPI Status register
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS28E01-100 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:带SHA-1引擎保护的1K位1-Wire EEPROM |
| DS28E01-100_12 | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:1Kb Protected 1-Wire EEPROM with SHA-1 Engine |
| DS28E01-100+ | 功能描述:电可擦除可编程只读存储器 RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| DS28E01G-100+R | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine |
| DS28E01G-100+T | 制造商:DALLAS 制造商全称:Dallas Semiconductor 功能描述:1K-Bit Protected 1-Wire EEPROM with SHA-1 Engine |
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