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| 型号： | DS3030W-100# |
| 厂商： | Maxim Integrated |
| 文件页数： | 2/18页 |
| 文件大小： | 0K |
| 描述： | IC NVSRAM 256KBIT 100NS 256BGA |
| 标准包装： | 1 |
| 格式 - 存储器： | RAM |
| 存储器类型： | NVSRAM（非易失 SRAM） |
| 存储容量： | 256K (32K x 8) |
| 速度： | 100ns |
| 接口： | 并联 |
| 电源电压： | 3 V ~ 3.6 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 256-BBGA |
| 供应商设备封装： | 256-BGA（27x27） |
| 包装： | 托盘 |
3.3V Single-Piece 256kb Nonvolatile SRAM
with Clock
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground......-0.3V to +4.6V
Operating Temperature Range ...........................-40°C to +85°C
Storage Temperature Range ...............................-40°C to +85°C
Soldering Temperature Range..........See IPC/JEDEC J-STD-020
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
(T A = -40°C to +85°C.)
PARAMETER
Supply Voltage
Input Logic 1
Input Logic 0
SYMBOL
V CC
V IH
V IL
CONDITIONS
MIN
3.0
2.2
0.0
TYP
3.3
MAX
3.6
V CC
0.4
UNITS
V
V
V
DC ELECTRICAL CHARACTERISTICS
(V CC = 3.3V ±0.3V, T A = -40 ° C to +85 ° C.)
PARAMETER
Input Leakage Current
I/O Leakage Current
Output-Current High
Output-Current Low
Output-Current Low RST
SYMBOL
I IL
I IO
I OH
I OL
I OL RST
CONDITIONS
CE = CS = V CC
At 2.4V
At 0.4V
At 0.4V (Note 1)
MIN
-1.0
-1.0
-1.0
2.0
8.0
TYP
MAX
+1.0
+1.0
UNITS
μA
μA
mA
mA
mA
Output-Current Low IRQ /FT
I OL IRQ /FT At 0.4V (Note 1)
7.0
mA
Standby Current
Operating Current
Write Protection Voltage
I CCS1
I CCS2
I CCO1
V TP
CE = CS = 2.2V
CE = CS = V CC - 0.2V
t RC = 200ns, outputs open
2.8
0.5
0.2
2.9
7
5
50
3.0
mA
mA
V
PIN CAPACITANCE
(T A = +25 ° C.)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C IN
C OUT
CONDITIONS
Not production tested
Not production tested
MIN
TYP
15
15
MAX
UNITS
pF
pF
2
_____________________________________________________________________
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DS3030W-100# | 功能描述:NVRAM RoHS:否 制造商:Maxim Integrated 数据总线宽度:8 bit 存储容量:1024 Kbit 组织:128 K x 8 接口类型:Parallel 访问时间:70 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 工作电流:85 mA 最大工作温度:+ 70 C 最小工作温度:0 C 封装 / 箱体:EDIP 封装:Tube |
| DS303-1022NR WAF | 制造商:ON Semiconductor 功能描述: |
| DS303-1061NR WAF | 制造商:ON Semiconductor 功能描述: |
| DS30410 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SURFACE MOUNT PRECISION ZENER DIODE |
| DS3045W | 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:3.3V Single-Piece 1Mb Nonvolatile SRAM with Clock |
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