参数资料
型号: DS3514T+
厂商: Maxim Integrated Products
文件页数: 3/21页
文件大小: 0K
描述: IC I2C GAMMA/VCOM BUFF 48-TQFN
产品培训模块: Lead (SnPb) Finish for COTS
Obsolescence Mitigation Program
标准包装: 101
应用: TFT-LCD 面板:伽玛缓冲器,VCOM 驱动器
输出类型: 满摆幅
电路数: 14
电流 - 电源: 5mA
电流 - 输出 / 通道: 4mA
电压 - 电源,单路/双路(±): 9 V ~ 15 V
安装类型: 表面贴装
封装/外壳: 48-WFQFN 裸露焊盘
供应商设备封装: 48-TQFN-EP(7x7)
包装: 管件
产品目录页面: 1429 (CN2011-ZH PDF)
DS3514
Detailed Description
The DS3514 operates in one of three modes that deter-
mine how the VCOM and gamma DACs are
controlled/updated. The first two modes allow “banked”
control of the 14 gamma channels and one VCOM chan-
nel. Depending on the mode, one of four banks (in
EEPROM) can be selected using either the S0/S1 pins
or using the SOFT S0/S1 bits in the Soft S0/S1 register.
Once a bank is selected, the LD pin can then be used
to simultaneously update each channel’s DAC output.
The third and final mode is not banked. It allows I2C
control of each channel’s Latch A register that is SRAM
(volatile), allowing quick and unlimited updates. In this
mode, the LD pin can also be used to simultaneously
update each channel’s DAC output. A detailed descrip-
tion of the three modes as well as additional features of
the DS3514 follows.
Mode Selection
The DS3514 mode of operation is determined by two
bits located in Control register (CR, register 48h), which
is nonvolatile (NV) (EEPROM). In particular, the mode is
determined by the MODE0 bit (CR.0) and the MODE1
bit (CR.1). Table 1 illustrates how the two control bits
are used to select the operating mode. When shipped
from the factory, the DS3514 is programmed with both
MODE bits set to zero.
S0/S1 Pin-Controlled Bank-Updating Mode
As shown in the
Block Diagram, each channel contains
four words of EEPROM that are used to implement the
“banking” functionality. Each bank contains unique
DAC settings for each channel. When the DS3514 is
configured in this operating mode, the desired bank is
selected using the S0 and S1 pins as shown in Table 2
where 0 is ground and 1 is VCC. For example, if S0 and
S1 are both connected to ground, the first bank (Bank
A) is selected. Once a bank is selected, the timing of
the DAC update depends on the state of LD pin. When
LD is high, Latch B functions as a flow-through latch, so
the amplifier responds asynchronously to changes in
the state of S0/S1 to meet the tSEL specification.
Conversely, when LD is low, Latch B functions as a
latch, holding its previous data. A low-to-high transition
on LD allows the Latch B input data to flow through and
update the DACs with the EEPROM bank selected by
S0/S1. A high-to-low transition on LD latches the select-
ed DAC data into Latch B.
SOFT S0/S1 Bit-Controlled Bank-Updating
Mode
This mode also features banked operation with the only
difference being how the desired bank is selected. In
particular, the bank is selected using the SOFT S0 (bit
0) and SOFT S1 (bit 1) bits contained in the Soft S0/S1
register (40h). The S0 and S1 pins are ignored in this
mode. Table 2 illustrates the relationship between the
bit settings and the selected bank. For example, if
SOFT S0 and SOFT S1 are written to zero, the first bank
(Bank A) is selected. Once a bank is selected, the tim-
ing of the DAC update depends on the state of the LD
pin. When LD is high, Latch B functions as a flow-
through latch, so the amplifier responds asynchronous-
ly to changes in the state of the SOFT S0/S1 bits. These
are changed by an I2C write. Conversely, when LD is
low, Latch B functions as a latch, holding its previous
data. A low-to-high transition on LD allows the Latch B
input data to flow through and update the DACs with
the EEPROM bank selected by the SOFT S0/S1 bits. A
high-to-low transition on LD latches the selected DAC
data into Latch B.
Because the Soft S0/S1 register is SRAM, subsequent
power ups result in the SOFT S0 and SOFT S1 bits
being cleared to 0 and, hence, powering up to Bank A.
I2C Individual Channel-Control Mode
In this mode the I2C master writes directly to individual
channel Latch A registers to update a single DAC (i.e.,
not banked). The Latch A registers are SRAM and not
EEPROM. This allows an unlimited number of write
cycles as well as quicker write times since tW only
applies to EEPROM writes. As shown in the
Memory
MODE1 BIT
(CR.1)
MODE0 BIT
(CR.0)
MODE
0
S0/S1 Pin-Controlled Bank
Updating (Factory Default)
0
1
S0/S1 Bit-Controlled Bank
Updating
1
X
I2C Individual Channel
Control
Table 1. Operating Modes
BIT OR PIN
S1
S0
VCOM
CHANNEL
GAMMA
CHANNELS
0
VCOM Bank A
GM1–GM14 Bank A
0
1
VCOM Bank B
GM1–GM14 Bank B
1
0
VCOM Bank C
GM1–GM14 Bank C
1
VCOM Bank D
GM1–GM14 Bank D
Table 2. Bank Selection Table
I2C Gamma and VCOM Buffer with EEPROM
______________________________________________________________________________________
11
相关PDF资料
PDF描述
MAX4029EUP+T IC VIDEO MUX-AMP 20-TSSOP
VI-2NP-IV-F3 CONVERTER MOD DC/DC 13.8V 150W
LTC1595AIS8#TRPBF IC D/A CONV 16BIT MULTPLYNG8SOIC
VI-2NN-IV-F2 CONVERTER MOD DC/DC 18.5V 150W
LTC1595AIS8#TR IC DAC 16BIT MULTIPLY SER 8SOIC
相关代理商/技术参数
参数描述
DS3514T+ 功能描述:LCD Gamma缓冲器 I2C Gamma & VCOM Buffer w/EEPROM RoHS:否 制造商:Maxim Integrated 输入补偿电压: 转换速度: 电源电压-最大:20 V 电源电压-最小:9 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-38 封装:Tube
DS3514T+T&R 制造商:Maxim Integrated Products 功能描述:14 CH GAMMA+VCOM 10BIT 48 TQFN T&R - Tape and Reel
DS3514T+T&R 功能描述:LCD Gamma缓冲器 I2C Gamma & VCOM Buffer w/EEPROM RoHS:否 制造商:Maxim Integrated 输入补偿电压: 转换速度: 电源电压-最大:20 V 电源电压-最小:9 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:TQFN-38 封装:Tube
DS3514T+TR 制造商:MAXIM 制造商全称:Maxim Integrated Products 功能描述:I2C Gamma and VCOM Buffer with EEPROM
DS3516FP000 制造商:Thomas & Betts 功能描述:30A,CON,4P5W,MG,516,3PY120V