参数资料
型号: DS90LV804TSQX/NOPB
厂商: National Semiconductor
文件页数: 8/15页
文件大小: 0K
描述: IC BUFFER/REPEATR LVDS 4CH 32LLP
标准包装: 4,500
类型: 缓冲器
Tx/Rx类型: LVDS
延迟时间: 3.2ns
电容 - 输入: 3.5pF
电源电压: 3.15 V ~ 3.45 V
电流 - 电源: 140mA
安装类型: 表面贴装
封装/外壳: 32-WFQFN 裸露焊盘
供应商设备封装: 32-LLP-EP(5x5)
包装: 带卷 (TR)
其它名称: DS90LV804TSQX
8
7
6
5
4
3
2
1
17 18
19
20
21
22
23 24
32
31
30
29
28
27
26
25
9
10
11
12
13
14
15
16
DAP
(GND)
OUT0+
OUT0-
OUT1+
OUT1-
OUT2+
OUT2-
OUT3+
OUT3-
IN0+
IN0-
IN1+
IN1-
IN2+
IN2-
IN3+
IN3-
EN
V
D
V
D
G
N
D
V
D
V
D
G
N
D
G
N
D
G
N
D
G
N
D
V
D
V
D
V
D
V
D
N
/C
N
/C
SNLS195L – SEPTEMBER 2005 – REVISED APRIL 2013
DS90LV804 WQFN Pinout
(Top View)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings
(1)
Supply Voltage (VDD)
0.3V to +4.0V
CMOS Input Voltage (EN)
0.3V to (VDD+0.3V)
LVDS Input Voltage(2)
0.3V to (VDD+0.3V)
LVDS Output Voltage
0.3V to (VDD+0.3V)
LVDS Output Short Circuit Current
+90 mA
Junction Temperature
+150°C
Storage Temperature
65°C to +150°C
Lead Temperature (Solder, 4sec)
260°C
Max Pkg Power Capacity @ 25°C
4.16W
θJA
29.5°C/W
Thermal Resistance
θJC
3.5°C/W
Package Derating above +25°C
33.3mW/°C
HBM, 1.5k
, 100pF
12 kV
ESD Last Passing Voltage (LVDS output pins)
EIAJ, 0
, 200pF
250V
Charged Device Model
1000V
HBM, 1.5k
, 100pF
8 kV
ESD Last Passing Voltage (All other pins)
EIAJ, 0
, 200pF
250V
Charged Device Model
1000V
(1)
Absolute maximum ratings are those values beyond which damage to the device may occur. The databook specifications should be met,
without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. TI
does not recommend operation of products outside of recommended operation conditions.
(2)
VID max < 2.4V
2
Copyright 2005–2013, Texas Instruments Incorporated
Product Folder Links: DS90LV804
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