参数资料
型号: DSEC16-12A
厂商: IXYS
文件页数: 1/2页
文件大小: 38K
描述: DIODE UFAST 1200V 10A TO-220AB
标准包装: 50
系列: HiPerFRED™
电压 - 在 If 时为正向 (Vf)(最大): 2.94V @ 10A
电流 - 在 Vr 时反向漏电: 60µA @ 1200V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 1200V(1.2kV)
反向恢复时间(trr): 40ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
? 1999 IXYS All rights reserved
1 - 2
μs; rep. rating, pulse width limited by TVJM
tbd A
= 45°C; t
Features
p
= 10 ms (50 Hz), sine 40 A
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
μA
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
μs; 40 ns
= 25°C
Avalanche voltage rated for reliable
operation
μs8.5A
Soft reverse recovery for low
EMI/RFI
Low IRM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
μs, Duty Cycle < 2.0 %
Dimensions see IXYS Catalog 2000 (CD)
TO-220 AB
C
A
A
A C A
A = Anode, C = Cathode, TAB = Cathode
C (TAB)
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Pulse Width = 300
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
HiPerFREDTM
Epitaxial Diode
with common cathode and soft recovery
DSEC 16-12A
IFAV
VRRM
= 1200 V
trr
= 40 ns
= 2x 10 A
VRSM
VRRM
Type
V V
1200 1200 DSEC 16-12A
Symbol Test Conditions Maximum Ratings
IFRMS
IFAVM
IFRM
14 A
TC
= 115°C; rectangular, d = 0.5 10 A
tP
< 10
IFSM
TVJ
EAS
TVJ
= 25°C; non-repetitive 6.9 mJ
IAS
= 8 A; L = 180 μH
IAR
VA
= 1.25
·VR
typ.; f = 10 kHz; repetitive 0.8 A
TVJ
TVJM
Tstg
-55...+175 °C
175 °C
-55...+150 °C
Ptot
TC
= 25°C 60 W
Md
mounting torque 0.45...0.55 Nm
4...5 lb.in.
Weight
typical 2 g
Symbol Test Conditions Characteristic Values
typ. max.
IR
TVJ
= 25°C V
R
= VRRM
TVJ
= 150°C V
R
= VRRM
60
0.25 mA
VF
IF
= 10 A; T
VJ
= 150°C 1.96 V
TVJ
= 25°C 2.94 V
RthJC
RthCH
2.5 K/W
0.5 K/W
trr
IF
= 1 A; -di/dt = 50 A/
VR
= 30 V; T
VJ
IRM
VR
= 100 V; I
F
= 12 A; -di
F/dt = 100 A/
TVJ
= 100°C
937
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PDF描述
DSEC29-02A DIODE UFAST 200V 15A TO-220AB
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