参数资料
型号: DSEE55-24N1F
厂商: IXYS
文件页数: 1/4页
文件大小: 103K
描述: DIODE HFRED 2400V 55A I4-PAC
标准包装: 24
系列: HiPerFRED™
电压 - 在 If 时为正向 (Vf)(最大): 2.45V @ 60A
电流 - 在 Vr 时反向漏电: 1mA @ 1200V
电流 - 平均整流 (Io)(每个二极管): 60A
电压 - (Vr)(最大): 1200V(1.2kV)
反向恢复时间(trr): 220ns
二极管类型: 标准
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对串联
安装类型: 通孔,径向
封装/外壳: i4-Pac?-3
供应商设备封装: ISOPLUS i4-PAC?
包装: 管件
DSEE55-24N1F
ns
HiPerFRED
Symbol Definition
R a t i n g s
Features / Advantages:
typ. max.
IFSM
IR
A
V
800
IFAV
A
VF
2.45
RthJC
0.60 K/W
VR
=
1200
1
3
5
min.
60
t = 10 ms
(50 Hz), sine
Applications:
VRRM
V
1200
V°C=
25
1
mA
TVJ
TVJ
=mA150
4
°C
Package:
Part number
VR
=
1200
TVJ
=°C25
IF
=A60
V
TC
=
110°C
rectangular 0.5d =
Ptot
250 W
TC
=
25
°C
TVJ
175 °C
-55
VRRM
=
IFAV
=
1200
V
60
A
TVJ
=
45°C
DSEE55-24N1F
V
max. repetitive reverse voltage
reverse current
forward voltage
virtual junction temperature
total power dissipation
max. forward surge current
Conditions
Unit
2.90
TVJ
=25
°C
CJ
junction capacitance
V = V; TR
600 pFf = 1 MHz = °CVJ
25
VF0
V
0.97
TVJ
=
175°C
rF
6.8
m?
V
1.56
TVJ
=°C150
IF
=A60
V
2.00
IF
=A120
IF
=A120
threshold voltage
slope resistance
for power loss calculation only
Backside: isolated
35 A
TVJ
=°C25
reverse recovery time
A
60
75
220
ns
trr
=
40 ns
Housing:
i4-Pac
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Phase leg
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
IRM
max. reverse recovery current
IF
=A;60
VR
=V600
T=VJ
100°C
-diF/dt
=A/μs600
trr
TVJ
=°C25
T=VJ
100°C
48
thermal resistance junction to case
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
average forward current
IXYS reserves the right to change limits, conditions and dimensions.
?
2011 IXYS all rights reserved
20110215a
Data according to IEC 60747and per diode unless otherwise specified
相关PDF资料
PDF描述
DSEE8-06CC DIODE HFRED 600V 10A ISOPLUS220
DSEK60-02A DIODE FRED 200V 34A TO-247AD
DSEK60-06A DIODE FRED 600V 2X30A TO-247AD
DSEK60-12A DIODE FRED 1200V 2X26A TO-247
DSP25-16A DIODE ARRAY 1600V 28A TO247AD
相关代理商/技术参数
参数描述
DSEE6-06CC 功能描述:整流器 6 Amps 600V 2.7 Rds RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
DSEE8-06CC 功能描述:整流器 10 Amps 600V 1.75 Rds RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel
DSEE8-08CC 功能描述:二极管 - 通用,功率,开关 8 Amps 400V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube
DSEI 120-06A 制造商:IXYS 功能描述:Bulk
DSEI 120-12A 制造商:IXYS 功能描述:Bulk