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| 型号： | DSEI12-12A |
| 厂商： | IXYS |
| 文件页数： | 1/3页 |
| 文件大小： | 204K |
| 描述： | DIODE FRED 1200V 11A TO-220AC |
| 产品目录绘图： | TO-220AC Package |
| 标准包装： | 50 |
| 二极管类型： | 标准 |
| 电压 - (Vr)（最大）： | 1200V（1.2kV） |
| 电流 - 平均整流 (Io)： | 11A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 2.6V @ 12A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 反向恢复时间(trr)： | 70ns |
| 电流 - 在 Vr 时反向漏电： | 250µA @ 1200V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-2 |
| 供应商设备封装： | TO-220AC |
| 包装： | 管件 |
          ? 2004 IXYS All rights reserved - 3 2007 004 DSEI 12-12A IXYS reserves the right to change limits, test conditions and dimensions. Symbol Conditions Characteristic Values typ. max. IR VR = V RRM VR = 0.8 ·VRRM VR = 0.8 ·VRRM TVJ = 25°C TVJ = 25°C TVJ = 25°C 250 50 4 μA μA mA VF IF = 2 A TVJ = 50°C TVJ = 25°C 2.2 2.6 V V VT0 rT For power-loss calculations only TVJ = T VJM .65 46.2 V mW RthJC RthCH RthJA 0.5 .6 60 K/W K/W K/W trr IF = A; -di/dt = 50 A/μs; V R = 30 V; T VJ = 25°C 50 70 ns IRM VR = 540 V; I F = 2 A; -diF/dt = 00 A/μs L < 0.05 μH; TVJ = 00°C 6.5 7.2 A ? I FAVM rating includes reverse blocking losses at T VJM. VR = 0.8·VRRM, duty cycle d = 0.5 Data according to IEC 60747 IFAV VRRM =1200V trr = 50 ns = 11A Fast Recovery Epitaxial Diode (FRED) Features ? International standard package JEDEC TO-220 AC ? Planar passivated chips ? Very short recovery time ? Extremely low switching losses ? Low IRM-values ? Soft recovery behaviour ? Epoxy meets UL 94V-0 Applications ? Antiparallel diode for high frequency switching devices ? Anti saturation diode ? Snubber diode ? Free wheeling diode in converters and motor control circuits ? Rectifers in switch mode power supplies (SMPS) ? Inductive heating and melting ? Uninterruptible power supplies (UPS) ? Ultrasonic cleaners and welders Advantages ? High reliability circuit operation ? Low voltage peaks for reduced protection circuits ? Low noise switching ? Low losses ? Operating at lower temperature or space saving by reduced cooling Symbol Conditions Maximum Ratings IFRMS IFAVM ? IFRM TVJ = T VJM TC = 00°C; rectangular, d = 0.5 tp < 0 μs; rep. rating, pulse width limited by TVJM 25 50 A A A IFSM TVJ = 45°C; t = 0 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 75 80 A TVJ = 50°C; t = 0 ms t = 8.3 ms (60 Hz), sine (50 Hz), sine 65 70 A I2t TVJ = 45°C; t = 0 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 28 27 A2s TVJ = 50°C; t = 0 ms t = 8.3 ms (60 Hz), sine (50 Hz), sine 2 20 A2s TVJ TVJM Tstg -40...+50 50 -40...+50 °C °C °C Ptot TC = 25°C 78 W Md mounting torque 0.4...0.6 Nm Weight typical 2 g A C TO-220 A C A = Anode, C = Cathode C C A ? VRSM V VRRM V Type 1200 1200 DSEI 12-12A |
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PDF描述 |
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| DSEI19-06AS | DIODE FRED 600V 20A TO-263AB |
| DSEI20-12A | DIODE FRED 1200V 17A TO-220AC |
| DSEI30-06A | DIODE FRED 600V 37A TO-247AD |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| DSEI12-12A | 制造商:IXYS Corporation 功能描述:DIODE FAST RECOVERY 11A |
| DSEI19-06 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED) |
| DSEI19-06AS | 功能描述:二极管 - 通用，功率，开关 19 Amps 600V RoHS:否 制造商:STMicroelectronics 产品:Switching Diodes 峰值反向电压:600 V 正向连续电流:200 A 最大浪涌电流:800 A 配置: 恢复时间:2000 ns 正向电压下降:1.25 V 最大反向漏泄电流:300 uA 最大功率耗散: 工作温度范围: 安装风格:SMD/SMT 封装 / 箱体:ISOTOP 封装:Tube |
| DSEI19-06AS-TUB | 功能描述:肖特基二极管与整流器 Fast Recovery Exitaxil Diode FRED RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| DSEI20 | 制造商:IXYS 制造商全称:IXYS Corporation 功能描述:Fast Recovery Epitaxial Diode (FRED) |
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