参数资料
型号: DTC123EE
厂商: Rohm CO.,LTD.
元件分类: 功率晶体管
英文描述: Digital Transistor(Built in Resistor)
中文描述: 数字晶体管(内置电阻)
文件页数: 1/3页
文件大小: 68K
代理商: DTC123EE
(94S-653-C123E)
External dimensions (Units: mm)
402
Transistors
Digital transistors (built-in resistors)
DTC123EE / DTC123EUA / DTC123EKA
DTC123ESA
Features
1) Built-in bias resistors enable the
configuration of an inverter circuit
without connecting external input
resistors (see equivalent circuit).
2) The bias resistors consist of thin-
film resistors with complete isola-
tion to allow negative biasing of the
input. They also have the advan-
tage of almost completely eliminat-
ing parasitic effects.
3) Only the on/off conditions need to
be set for operation, making device
design easy.
Equivalent circuit
相关PDF资料
PDF描述
DTC123EKA Digital Transistor(Built in Resistor)
DTC123ESA Digital Transistor(Built in Resistor)
DTC123JSA Digital Transistor(Built in Resistor)
DTC123JUA Digital Transistor(Built in Resistor)
DTC123YSA Digital Transistor(Built in Resistor)
相关代理商/技术参数
参数描述
DTC123EE_09 制造商:ROHM 制造商全称:Rohm 功能描述:100mA / 50V Digital transistors (with built-in resistors)
DTC123EEATL 制造商:ROHM Semiconductor 功能描述:
DTC123EET1 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DTC123EET1G 功能描述:开关晶体管 - 偏压电阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
DTC123EETL 功能描述:开关晶体管 - 偏压电阻器 NPN 50V 100MA SOT-416 RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel